RC Delay Circuit Reset Precharge for NBTI-Stable Timing

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Solution Overview

Problem

Semiconductor devices with RC delay circuits are vulnerable to negative bias temperature instability (NBTI) stress degradation, which affects the PMOS threshold voltage and drain current, leading to timing instability in control signals.

Innovation Solution

Incorporating a reset signal function into the RC delay circuit, specifically using a NAND gate with a reset function to precharge nodes to a voltage level during stand-by mode, reducing NBTI stress degradation by resetting each node to a high voltage level responsive to the reset signal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of time

If RC delay circuits are used to introduce delay into control signals, then timing adjustment capability is improved, but vulnerability to NBTI stress degradation increases

Engineering Contradiction:
Improvetiming adjustment capabilityVSAvoidvulnerability to NBTI stress degradation
Core Design Contradiction:
Loss of timeVSReliability

Solution Approach 1:

The patent applies preliminary action by precharging the output node of the RC delay circuit to a high voltage level using a precharge transistor before the normal delay operation begins. This precharging action prepares the circuit in advance to avoid the harmful low-voltage state that causes NBTI degradation, while still maintaining the required delay functionality through the RC time constant.

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If PMOS threshold voltage is allowed to fluctuate according to NBTI stress degradation, then device operation is simpler, but output timing stability deteriorates

Engineering Contradiction:
Improvedevice operation simplicityVSAvoidoutput timing stability
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The patent implements beforehand cushioning by introducing a precharge transistor that actively compensates for the threshold voltage fluctuations caused by NBTI stress. This transistor provides a cushioning effect by maintaining the output node at a high voltage level, thereby protecting the output timing from degradation despite the PMOS threshold voltage changes.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If reset signal function is incorporated into RC delay circuit, then NBTI stress degradation is reduced, but device complexity increases

Engineering Contradiction:
ImproveNBTI stress degradation reductionVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies universality by designing the precharge transistor to serve multiple functions: it acts as a reset mechanism to clear the delay circuit state, functions as a precharge element to prepare the output node, and provides a pathway to mitigate NBTI stress degradation. This multi-functionality reduces the need for separate dedicated components.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the reset function with the precharge function by using the same precharge transistor and control signal for both purposes. Instead of having separate reset circuitry and precharge circuitry, the invention combines these functions into a single integrated mechanism, thereby reducing overall device complexity while achieving the desired reliability improvement.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively mitigates NBTI stress degradation, ensuring reliable operation by maintaining high voltage levels during stand-by modes and reducing timing instability in RC delay circuits, thereby enhancing the stability and reliability of semiconductor devices.

Implementation Method 1

the RC delay circuit 100 includes a first RC load inverter 106 and a second RC load inverter 120 having RC time constants

Methodology Applied
Scientific EffectRC time constant: Capacitance

Implementation Method 2

Semiconductors often include resistive-capacitive (RC) delay circuits to introduce delay into control signals

Methodology Applied
Scientific EffectResistive-capacitive delay: Electrical Resistance

Implementation Method 3

Negative bias temperature instability (NBTI) stress degradation, which affects the PMOS threshold voltage and drain current

Methodology Applied
Scientific EffectNBTI stress degradation:

Data Source

PatentUS11342906B2Delay circuits, and related semiconductor devices and methods
Publication Date: 2022.05.24 MICRON TECHNOLOGY INC
  • US11342906B2 patent drawing
  • US11342906B2 patent drawing
  • US11342906B2 patent drawing

AI summary

Devices for generating a delay output signal are disclosed. A device may include a first delay circuit and a second delay circuit coupled in series between a first node and a second node in a delay path for the device, and having a third node therebetween. The device may also include a third circuit coupled to the third node and configured to charge the third node responsive to detecting a signal has passed through the first node and the third node. Associated semiconductor devices and methods are also disclosed.