RC-IGBT Electrode Layout With Insulated Diode Contact Separation
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Solution Overview
Problem
Current semiconductor devices with integrated IGBT and diode structures face challenges in optimizing the layout and insulation to enhance electrical properties, particularly in reducing on-resistance and on-voltage, while maintaining efficient reverse recovery performance.
Innovation Solution
The semiconductor device incorporates a specific layout with RC-IGBT regions, trench electrode structures, and interlayer insulating films to optimize the integration of IGBT and diode components, including the use of trench structures and plug electrodes to improve electrical connectivity and reduce resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the IGBT and diode are integrated in a single semiconductor substrate with shared contact holes, then device complexity is reduced and manufacturing is simplified, but electrical isolation between components becomes more difficult to achieve
Solution Approach 1:
The contact hole structure is segmented into multiple functional zones: a first contact hole region for IGBT connection, a second contact hole region for diode connection, and an interlayer insulating film region for electrical isolation. This segmentation allows each component to have dedicated contact pathways while maintaining electrical separation through the insulating film positioned between the contact hole regions.
Solution Approach 2:
An interlayer insulating film is introduced as an intermediary element between the IGBT contact holes and diode contact holes. This insulating film acts as a mediator that provides electrical isolation while allowing both components to share the same semiconductor substrate and interlayer structure, thus simplifying the overall device architecture.
2Loss of energy
If contact holes are made larger to improve electrical connectivity and reduce resistance, then on-resistance decreases, but the area occupied by contact structures increases
Solution Approach 1:
The contact hole structure employs local quality optimization by varying the size and shape of contact holes based on their specific functional requirements. IGBT contact holes are designed with dimensions optimized for low resistance connection to the IGBT emitter, while diode contact holes are sized appropriately for diode connection, allowing each region to have the precise electrical properties needed without unnecessarily increasing overall contact structure area.
3Loss of energy
If the layout is optimized to reduce on-voltage, then electrical performance improves, but manufacturing precision requirements increase
Solution Approach 1:
The interlayer insulating film is formed in advance before the contact holes are created, establishing a pre-defined electrical isolation structure. This preliminary action allows subsequent contact hole formation and electrode positioning to proceed with standard manufacturing tolerances, as the isolation boundaries are already established, reducing the precision requirements for later fabrication steps.
Data Source
AI summary
A semiconductor device includes a chip having a main surface, an IGBT region formed at the main surface, a diode region formed at the main surface, an insulating film formed on the main surface so as to expose the diode region and so as to cover the IGBT region, a plug electrode embedded in a part, which covers the IGBT region, of the insulating film so as to be partially exposed from the insulating film, and a main surface electrode that includes a first electrode film covering the plug electrode so as to expose the diode region and a second electrode film covering the first electrode film and the diode region.