Reverse Conducting IGBT Minority Carrier Lifetime Control
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Solution Overview
Problem
The performance of reverse conducting IGBT devices needs improvement due to the direct impact of minority carrier lifetime control of the FRD portion on the IGBT portion, leading to conduction voltage drops and affected device reliability.
Innovation Solution
A method involving ion implantation with a copper electrode layer as a barrier to control minority carrier lifetime of the FRD cell region without affecting the IGBT cell region, using the copper layer as both a metal electrode and barrier during ion implantation, and forming a metal electrode layer on the FRD cell region connected to the copper electrode layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate IGBT cells and FRD cells are provided to eliminate negative resistance effect, then device reliability is improved, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The patent combines the IGBT cell region and FRD cell region into a single integrated device structure on one chip. By merging these two functional regions while maintaining their spatial separation and independent controllability, the device achieves both the reliability benefits of separate cells and the manufacturing advantages of integration.
Solution Approach 2:
The patent creates a multi-functional device that simultaneously provides IGBT switching functionality and FRD reverse conduction functionality in a single integrated structure. This universal design allows the device to perform multiple functions without requiring separate discrete components, reducing overall system complexity.
2Manufacturing precision
If copper electrode layer is formed on IGBT cell region and used as barrier layer during ion implantation, then manufacturing precision and device performance are improved, but additional manufacturing steps are required
Solution Approach 1:
The patent combines the copper electrode layer formation with the ion implantation barrier function. The same copper layer that serves as the metal electrode for the IGBT cell region is also utilized as the barrier layer during ion implantation of the FRD cell region. This merging of functions eliminates the need for separate barrier layer deposition steps, maintaining manufacturing simplicity while achieving precise control.
Solution Approach 2:
The copper electrode layer is designed to serve multiple functions: as the metal electrode for electrical connection in the IGBT cell region and as the barrier layer protecting the IGBT region during ion implantation. This multi-functional design reduces the total number of manufacturing steps while improving manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance and stability of the reverse conducting IGBT device by independently controlling the minority carrier lifetime of the FRD and IGBT regions, improving device reliability and reducing process complexity and cost.
Implementation Method 1
performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region
Data Source
AI summary
A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.