Semiconductor Module RC-IGBT Positioning for Surge Voltage Control
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Solution Overview
Problem
The conventional transfer mold-type intelligent power modules (IPMs) using reverse conducting insulated gate bipolar transistors (RC-IGBTs) face issues with excessive surge voltage generation due to increased wiring inductance, as the RC-IGBTs are mounted at positions similar to ordinary IGBTs, leading to long emitter wire loops.
Innovation Solution
The semiconductor module design includes RC-IGBTs positioned closer to power terminals than control ICs, with optimized emitter wire connections to reduce internal inductance and suppress surge voltage, while maintaining compatibility with existing module layouts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If RC-IGBT is mounted at the same position as ordinary IGBT to maintain unified outer shape, then manufacturing consistency is improved, but wiring inductance increases causing excessive surge voltage
Solution Approach 1:
The patent applies local quality by differentiating the mounting position of RC-IGBT from ordinary IGBT. Specifically, RC-IGBT is mounted closer to the power terminal while ordinary IGBT is mounted closer to the control IC, allowing each component to be positioned optimally for its specific electrical connection requirements rather than forcing uniform positioning
2Object-affected harmful factors
If emitter wire loop length is reduced to decrease wiring inductance, then surge voltage is reduced, but device complexity increases due to optimized layout requirements
Solution Approach 1:
The patent inverts the conventional mounting arrangement by placing RC-IGBT closer to the power terminal rather than near the control IC. This inversion optimizes the emitter wire path for RC-IGBT, reducing the loop length and associated inductance while maintaining acceptable gate wire lengths for control signaling
Data Source
AI summary
A semiconductor module includes a die pad area between positions where a plurality of power terminals are arranged and positions where an HVIC and an LVIC are arranged. A plurality of RC-IGBTs are arranged in the die pad area at positions closer to the plurality of power terminals than to the HVIC and the LVIC.