RC IGBT Electrode Structure for Controllable Reverse Conduction

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Solution Overview

Problem

Existing RC IGBTs lack high controllability, particularly when used in power semiconductor half bridge circuits, leading to inefficiencies and safety concerns due to uncontrollable reverse conducting states.

Innovation Solution

The RC IGBT integrates an IGBT section and a diode section with separate control electrodes, including IGBT control electrodes and plasma control electrodes, allowing independent control of both sections to manage forward and reverse load currents effectively.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a separate diode is used to provide reverse current capability, then reverse conductivity is achieved, but device complexity increases

Engineering Contradiction:

Improvereverse conductivityVSAvoiddevice structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the IGBT and diode functions into a single monolithic integrated structure. The semiconductor body contains both an IGBT section with control electrodes and a diode section, allowing both forward and reverse current capabilities to be achieved within one device without requiring separate components.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The RC IGBT structure is designed to perform multiple functions: it can conduct forward load current through the IGBT section when activated by control signals, and conduct reverse load current through the diode section when reverse voltage is applied. This multi-functionality eliminates the need for separate diode components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Ease of operation

If the reverse conducting state is made controllable with separate control electrodes, then controllability is improved, but device complexity increases

Engineering Contradiction:

ImprovecontrollabilityVSAvoidcontrol electrode structure

Core Design Contradiction:

Ease of operationVSDevice complexity

Solution Approach 1:

The control electrode structure is segmented into distinct IGBT control electrodes and plasma control electrodes. The IGBT control electrodes control the IGBT section, while the plasma control electrodes control the diode section. This segmentation allows independent control of forward and reverse conducting states while maintaining a structured, manageable electrode architecture.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The plasma control electrodes act as intermediaries to control the diode section. By applying control signals to these plasma control electrodes, the reverse conducting state of the diode section can be controlled indirectly, enabling precise control of reverse current without directly modifying the diode structure.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Adaptability or versatility

If control trenches extend into both IGBT and diode sections, then unified control is achieved, but manufacturing precision requirements increase

Engineering Contradiction:

Improvecontrol flexibilityVSAvoidtrench configuration

Core Design Contradiction:

Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

While the control trenches are unified and extend into both sections, the electrode configurations within the trenches are optimized locally for each section. The IGBT control electrodes are positioned and configured specifically for controlling the IGBT section, while plasma control electrodes are configured for the diode section. This allows unified structural control while maintaining section-specific control characteristics.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS12575168B2RC IGBT, method of producing an RC IGBT and method of controlling a half bridge circuit

Publication Date: 2026.03.10 INFINEON TECHNOLOGIES AG

AI summary

An RC IGBT includes an active region with an IGBT section and a diode section. In a plurality of control trenches of the RC IGBT, there are a plurality of IGBT control electrodes and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes, each of the IGBT control electrodes and plasma control electrodes being electrically isolated from both load terminals of the RC IGBT. The IGBT section includes both a first subset of the IGBT control electrodes and a first subset of the plasma control electrodes. The diode section includes a second subset of the plasma control electrodes.