RDL Reinforcement Layer for Wire Bond Impact Resistance
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Solution Overview
Problem
Conventional RDL structures face issues during wire bonding, where the bond ball can impact the substrate, causing cracks or deformations, and increasing the thickness to resist impact leads to parasitic capacitance and performance degradation.
Innovation Solution
An RDL structure with a reinforcement layer of higher material strength than the conductive layers, positioned between the first and second conductive layers, which buffers the impact of the bond ball, allowing for reduced thickness and lower parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the thickness of the RDL is increased to improve impact resistance, then the capability to resist bond ball impact is improved, but parasitic capacitance increases and circuit performance deteriorates
Solution Approach 1:
The patent introduces a reinforcement layer made of conductive material with higher strength than the conductive layers, creating a composite structure. This reinforcement layer is positioned between the first and second conductive layers, providing enhanced mechanical support and impact resistance without requiring increased overall thickness, thereby avoiding the parasitic capacitance issue
Solution Approach 2:
The reinforcement layer is selectively positioned only in the bond pad area where impact resistance is most needed, rather than uniformly increasing the thickness of the entire RDL. This localized approach provides targeted mechanical support while minimizing the overall thickness and parasitic capacitance of the structure
2Reliability
If the thickness of the RDL is increased to prevent substrate damage, then the protection capability is improved, but the parasitic capacitance increases affecting circuit performance
Solution Approach 1:
The reinforcement layer creates a composite structure that provides enhanced mechanical protection to the substrate without increasing the overall RDL thickness. The high-strength conductive material in the reinforcement layer absorbs and distributes impact forces, protecting the substrate from bond ball damage while maintaining thin overall dimensions to minimize parasitic capacitance
Solution Approach 2:
The reinforcement layer acts as an intermediary element between the conductive layers and the substrate, providing mechanical support and impact absorption. This intermediate structure protects the substrate from direct bond ball impact while the thin design minimizes parasitic capacitance effects on circuit performance
Data Source
AI summary
The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer.