Semiconductor Package RDL Structure for IR Drop Reduction

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Solution Overview

Problem

Semiconductor packages face challenges in managing IR drop performance as chip size increases, requiring effective methods to control voltage drops induced by current flow through resistive parasitic elements to maintain high operating speeds and functionality.

Innovation Solution

A semiconductor package design incorporating a redistribution layer (RDL) structure that partially covers the semiconductor chip, with RDL traces having greater width than internal interconnections, providing external conductive paths with lower resistance and allowing rerouting of power circuits to improve IR drop performance and design flexibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the chip size is increased to accommodate more integrated circuits, then the functionality and operating speed are improved, but the IR drop performance deteriorates due to increased current flow through resistive parasitic elements

Engineering Contradiction:
ImprovefunctionalityVSAvoidIR drop performance
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent introduces an external RDL structure that adds a new dimensional layer for current redistribution outside the chip boundaries. This external redistribution layer provides additional current paths that bypass the internal resistive parasitic elements, effectively adding a spatial dimension to current flow management and reducing IR drop in high-power-density regions

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The RDL structure acts as an intermediary between the chip pads, providing alternative current paths that mediate the current flow. Instead of current flowing directly through the resistive parasitic elements within the chip, the RDL structure serves as an intermediate conductive path that reduces the overall resistance and mitigates IR drop effects

Inventive Principle:
Principle #24Intermediary (Mediator)

2Speed

If the chip size is increased to support high operating speeds, then the processing capability is improved, but the voltage drop control becomes more difficult

Engineering Contradiction:
Improveoperating speedVSAvoidvoltage drop control
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent segments the current redistribution function between internal chip interconnections and the external RDL structure. By dividing the current path into internal and external segments, the design can optimize each segment independently - the internal interconnections maintain signal integrity for high-speed operation while the external RDL structure handles the heavy current redistribution to minimize voltage drops

Inventive Principle:
Principle #1Segmentation

3Reliability

If wider conductive paths are used to reduce resistance, then the IR drop performance is improved, but the area occupied by conductors increases

Engineering Contradiction:
ImproveIR drop performanceVSAvoidconductor area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the function of internal chip interconnections with the external RDL structure to create a unified current redistribution system. By combining the internal power delivery network with the external RDL layer, the design achieves lower overall resistance without requiring excessive conductor width within the chip area, as the external RDL provides additional conductive space

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The RDL structure effectively reduces IR drop by providing lower resistance paths and rerouting current in high power density regions, enhancing the semiconductor chip's performance and power integrity while maintaining design flexibility.

Implementation Method 1

the impact of IR drop, which is induced by the currents that flow through the resistive parasitic elements

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS20220319970A1Semiconductor package
Publication Date: 2022.10.06 MEDIATEK INC
  • US20220319970A1 patent drawing
  • US20220319970A1 patent drawing
  • US20220319970A1 patent drawing

AI summary

A semiconductor package disposed on a base is provided. The semiconductor package includes a semiconductor chip and a redistribution layer (RDL) structure. The semiconductor chip includes a first chip pad and a second chip pad. The redistribution layer (RDL) structure partially covers the semiconductor chip and is separated from the base by the semiconductor chip. The RDL structure includes a redistribution layer (RDL) trace having a first terminal and a second terminal. The first terminal of the RDL trace is electrically coupled to the first chip pad. The second terminal of the RDL trace is electrically coupled to the second chip pad.