Reaction Chamber Purging to Extend Wafer Batch Throughput
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Solution Overview
Problem
The accumulation of defects on internal components of reaction chambers in semiconductor processing apparatus limits the batch size of wafers that can be processed before a chamber clean is required, reducing throughput.
Innovation Solution
Implementing an interval conditioning reaction chamber purge during processing to remove defects before they reach an accumulation baseline, allowing continued processing without immediate chamber clean cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If continuous wafer processing is conducted in a reaction chamber, then throughput increases, but defect accumulation on internal components worsens, requiring frequent chamber cleans
Solution Approach 1:
The patent implements periodic interval conditioning purges during batch processing to remove accumulated defects from internal chamber components. The controller periodically executes purge cycles at predetermined intervals based on wafer count or processing time, eliminating harmful deposits before they reach contamination thresholds. This periodic maintenance action enables continuous high-volume processing while preventing defect accumulation that would otherwise require frequent chamber cleans and reduce throughput.
2Reliability
If chamber clean cycles are performed frequently, then defect accumulation is reduced, but processing time is lost and throughput decreases
Solution Approach 1:
The system performs preliminary interval conditioning purges during batch processing to proactively remove defect deposits before they reach levels requiring full chamber cleans. The controller monitors wafer count and processing time, executing purge cycles at predetermined intervals to eliminate accumulated contaminants early. This preliminary maintenance prevents the need for time-consuming full chamber clean cycles, maintaining defect control while maximizing continuous processing time and throughput.
3Productivity
If batch size is increased to improve throughput, then productivity increases, but defect accumulation on internal components accelerates, reducing processing reliability
Solution Approach 1:
The controller executes periodic interval conditioning purges during large batch processing to remove defect accumulation from internal chamber components. These purges are triggered at predetermined intervals based on wafer count or processing time, preventing defect buildup that would compromise processing reliability. This periodic maintenance enables the system to handle larger batch sizes for improved throughput while maintaining consistent product quality and processing reliability throughout the extended batch duration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Increases the batch size of wafers that can be processed between clean cycles, enhancing throughput by delaying the need for chamber cleaning and reducing substrate contamination.
Implementation Method 1
conducting an interval conditioning reaction chamber purge to remove defects generated by the wafer processing from the reaction chamber
Implementation Method 2
conducting a deposition on a first portion of a batch of deposition wafers in a reaction chamber
Data Source
AI summary
Processing methods and apparatus for increasing a reaction chamber batch size. Such a method of processing deposition substrates (e.g., wafers), involves conducting a deposition on a first portion of a batch of deposition wafers in a reaction chamber, conducting an interval conditioning reaction chamber purge to remove defects generated by the wafer processing from the reaction chamber; and following the interval conditioning mid-batch reaction chamber purge, conducting the deposition on another portion of the batch of wafers in the reaction chamber. The interval conditioning reaction chamber purge is conducted prior to exceeding a baseline for acceptable defect (e.g., particle) generation in the chamber and is performed while no wafers are positioned in the reaction chamber.