Reaction Chamber Upper Electrode Switching for Plasma Source Flexibility
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Solution Overview
Problem
Existing reaction chambers in semiconductor manufacturing are limited in their ability to selectively use either inductively coupled plasma (ICP) or capacitively coupled plasma (CCP) sources, restricting the discharge window and use range of plasma sources.
Innovation Solution
A reaction chamber design that includes an upper electrode device with a dielectric cylinder, coil, power source, and switches, allowing for selective connection of the power source to either the coil or the upper electrode plate, enabling the use of ICP, CCP, or ICP-CCP sources for plasma generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If only individual ICP source or CCP source is used in the reaction chamber, then the plasma generation is simple and reliable, but the discharge window and use range of plasma sources are limited
Solution Approach 1:
The reaction chamber is designed with both ICP coil and CCP electrode structures integrated into a single system, allowing the same chamber to perform multiple plasma generation functions. The upper electrode device can be configured as ICP coil, CCP electrode, or both simultaneously, enabling the chamber to adapt to different plasma source requirements without needing separate dedicated chambers for each plasma type.
Solution Approach 2:
The reaction chamber incorporates switching mechanisms that allow dynamic reconfiguration of the upper electrode device between ICP and CCP modes. The electrical connection relationships can be changed during operation, enabling flexible transition between different plasma generation methods to match different processing requirements.
2Quantity of substance
If ICP source is used, then high plasma density is achieved, but plasma area uniformity is reduced
Solution Approach 1:
The patent combines ICP coil structure and CCP electrode structure into an integrated upper electrode device. This merging allows the system to leverage the high plasma density capability of ICP while incorporating the area uniformity advantages of CCP, particularly when both modes operate simultaneously or when switching between them based on processing requirements.
3Manufacturing precision
If CCP source is used, then large area uniformity and high ion energy are achieved, but plasma density is reduced
Solution Approach 1:
The integrated upper electrode device merges CCP electrode capabilities with ICP coil capabilities. This allows the system to achieve large area uniformity through CCP mode while maintaining the option to boost plasma density using ICP mode, either simultaneously or sequentially, thereby overcoming the plasma density limitation of pure CCP operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design extends the discharge window and use range of plasma sources, allowing for flexible plasma generation, improving plasma uniformity and density, and enabling compatibility with both high plasma density and uniformity, thus enhancing semiconductor processing efficiency.
Implementation Method 1
an electromagnetic field generated by a current passing through a coil excites a reaction gas to generate a plasma
Implementation Method 2
an electrical voltage applied between electrodes excites a reaction gas to generate a plasma
Implementation Method 3
excites a reaction gas to generate a plasma
Data Source
AI summary
A reaction chamber includes an upper electrode device and a lower electrode device. The lower electrode device is disposed in the reaction chamber for carrying a workpiece to-be-processed. The upper electrode device includes a dielectric cylinder, a coil, an upper power source, an upper electrode plate, a first switch, and a second switch. The dielectric cylinder has a hollow cylindrical structure and is disposed at an upper portion of a chamber wall of the reaction chamber. The coil is arranged around the dielectric cylinder. The upper electrode plate is located above the lower electrode device. The first switch can selectively electively connect the upper power source to a first terminal of the coil or to the upper electrode plate. The second switch can selectively electrically connect a second terminal of the coil to the ground or to the upper electrode plate.