Semiconductor Reaction Chamber Layout for Low-Energy Plasma Etching
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Solution Overview
Problem
Existing plasma etching apparatuses face challenges in precisely and quickly controlling gas injection, leading to high plasma energy density, which can result in overreaction and damage to tiny structures during the chip manufacturing process.
Innovation Solution
A semiconductor reaction chamber design that divides the plasma generation area into strong and weak plasma zones using a spray head with through-holes, allowing low-energy plasma to be directed to the weak plasma area, and separate gas channels for precise control of process reaction gases, reducing plasma damage and enabling precise gas input.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If plasma generation gas and process reaction gas are mixed into the same channel, then the plasma generation efficiency is improved, but the gas injection control precision deteriorates and plasma energy density becomes too high
Solution Approach 1:
The patent divides the gas delivery system into separate channels: one channel delivers plasma generation gas to create high-density plasma, while another channel delivers process reaction gas separately. This segmentation allows independent control of each gas flow, enabling precise gas injection control while maintaining high plasma generation efficiency.
Solution Approach 2:
The patent introduces a separate gas distribution system that acts as an intermediary between the gas sources and the reaction chamber. This intermediary system enables precise control of gas injection timing and distribution, allowing the process reaction gas to be introduced separately from the plasma generation gas, thus resolving the control precision issue.
2Productivity
If plasma energy density is increased to improve etching efficiency, then the etching speed is improved, but the plasma damage to tiny structures increases
Solution Approach 1:
The patent employs periodic action by introducing process reaction gas in controlled pulses or sequences after plasma generation. This allows the plasma to be generated at high density for efficient etching, then the reaction gas is introduced to complete the etching process with reduced plasma damage, achieving both high productivity and reduced harmful effects.
Solution Approach 2:
The patent changes the temporal and spatial parameters of gas introduction by using separate channels. The plasma generation gas is introduced first to create high-density plasma for efficient etching, then the process reaction gas is introduced in a controlled manner to complete the etching with reduced damage. This parameter control enables high etching speed while minimizing plasma damage to tiny structures.
3Measurement precision
If separate gas channels are used for plasma generation gas and process reaction gas, then the gas injection control precision is improved, but the device complexity increases
Solution Approach 1:
The patent designs the separate gas channels with multi-functionality, where the gas distribution system serves multiple purposes: delivering plasma generation gas, delivering process reaction gas, and enabling precise control of gas injection timing. This universal design reduces the need for additional separate components, thereby limiting the increase in device complexity while achieving precise gas injection control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a low-energy plasma source, reduces plasma damage, and allows for rapid and precise gas control, effectively addressing the challenges of fine etching and protecting microstructures during atomic layer etching processes.
Implementation Method 1
the process gas is excited by radio frequency power to be ionized to form a plasma
Implementation Method 2
the process gas is excited by radio frequency power to be ionized to form a plasma
Data Source
AI summary
The present disclosure provides a semiconductor reaction chamber and an atomic layer plasma etching apparatus. The semiconductor reaction chamber includes a dielectric window and a reaction chamber body. The spray head is arranged between the dielectric window and the top wall of the reaction chamber body, and divides the plasma generation area into an upper strong plasma area and a lower weak plasma area. Moreover, a plurality of through-holes are distributed in the central area of the spray head and configured to allow the plasma in the strong plasma area to pass through. A first gas channel is arranged in an edge area of the spray head. The process reaction gas inlet member is located on a side where the gas inlet end of the first gas channel of the spray head is located. A second gas channel is arranged in the process reaction gas inlet member.