Reaction Chamber Thermal Balancing Near the Gate Valve
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Solution Overview
Problem
The non-uniform temperature distribution in substrate processing chambers, particularly due to heat flux variations near the gate valve, leads to inconsistent material deposition on semiconductor substrates during processes like CVD and ALD, affecting the uniformity of integrated circuit production.
Innovation Solution
A substrate processing apparatus with a reaction chamber equipped with a chiller and wall heaters, where a controller regulates the temperature across the chamber walls to maintain uniformity, using cooling fluids like water or gases, and insulators to enhance temperature control, ensuring consistent substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a gate valve is provided to connect the reaction chamber to the substrate transfer chamber, then substrate transfer capability is improved, but temperature uniformity deteriorates due to heat flux toward the gate valve
Solution Approach 1:
The patent applies local quality by providing a wall heater specifically at the gate valve region and a chiller at the opposite wall region. This localized thermal control compensates for the heat flux toward the gate valve, maintaining uniform temperature distribution across the chamber while preserving substrate transfer capability through the gate valve.
2Temperature
If wall heaters and chillers are added to control temperature distribution, then temperature uniformity is improved, but device complexity increases
Solution Approach 1:
Rather than uniformly heating or cooling the entire chamber wall, the patent applies thermal control components (wall heater and chiller) only at specific locations where temperature deviations occur. This localized approach achieves temperature uniformity while minimizing the addition of complex components.
Solution Approach 2:
The patent incorporates a controller that receives temperature information from temperature measurement units and adjusts the wall heater and chiller operations accordingly. This feedback mechanism automates temperature uniformity maintenance, reducing the need for complex manual control systems.
3Measurement precision
If temperature measurement units are distributed across the chamber wall, then temperature monitoring precision is improved, but device complexity increases
Solution Approach 1:
The patent places temperature measurement units at specific critical locations on the chamber wall, particularly near the gate valve where heat flux causes temperature variations. This targeted measurement approach provides sufficient temperature monitoring precision without requiring measurement units across the entire chamber surface.
Solution Approach 2:
The temperature measurement units are integrated with a controller that uses the measured temperature data to automatically adjust wall heater and chiller operations. This feedback loop enables precise temperature control with minimal measurement points, reducing device complexity while maintaining high measurement precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform temperature distribution across the substrate processing chamber, improving the consistency of material deposition and enhancing the uniformity of integrated circuit production by maintaining controlled temperature conditions.
Implementation Method 1
a chiller provided to the wall opposite the gate valve
Implementation Method 2
a substrate support provided with a heater disposed within the reaction chamber
Implementation Method 3
an insulator disposed between the chiller and an inner surface of the wall
Data Source
AI summary
Apparatuses for processing substrates with temperature controlled reaction chambers are provided. In some embodiments, an apparatus for processing a substrate includes a reaction chamber provided with a chamber wall; a gate valve provided to the wall; a substrate transfer chamber operationally connected to the gate valve; a substrate transfer robot disposed within the substrate transfer chamber for transferring the substrate between the reaction chamber and the substrate transfer chamber through the gate valve; a substrate support provided with a heater disposed within the reaction chamber; and a chiller provided to the wall opposite the gate valve.