Reaction Container Wall Structure for Uniform Semiconductor Gas Processing
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Solution Overview
Problem
The existing substrate processing apparatuses face challenges in improving manufacturing throughput due to inefficiencies in gas distribution and film uniformity, leading to adhesion of by-products on surfaces and reduced productivity.
Innovation Solution
Incorporating a flange portion and gas flow path with small conductance to suppress the entry of processing gases into the low temperature region, thereby reducing by-product adhesion and improving gas uniformity across the substrate processing region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied into the reaction container without a protruding portion, then gas flow is simple and device structure is simple, but gas distribution uniformity deteriorates and by-products adhere to surfaces
Solution Approach 1:
The inner wall of the reaction container is segmented into multiple regions by adding protruding portions at different positions. These protruding portions divide the gas flow path into distinct zones, allowing differential gas distribution to different substrate areas. This segmentation enables precise control over gas flow patterns to achieve uniform film formation without requiring complex external gas distribution systems.
Solution Approach 2:
The protruding portions extend radially inward from the inner wall, adding a dimensional feature that creates multiple gas flow pathways. This radial protrusion structure transforms the conventional flat wall geometry into a multi-level surface, enabling gas to reach different substrate regions through varied paths and improving overall gas distribution uniformity.
2Productivity
If processing gas enters the low temperature region freely, then gas flow is unrestricted and device operation is simple, but by-products adhere to the inner wall and productivity decreases
Solution Approach 1:
The protruding portions act as intermediary structures that intercept and redirect processing gas before it can enter the low temperature region. By positioning these protrusions strategically, they serve as physical barriers that guide gas flow along desired pathways while preventing direct access to areas where by-product adhesion would occur, thus maintaining productivity.
Solution Approach 2:
The protruding portions are positioned to preemptively block the path of processing gas toward the low temperature region before by-products can form and adhere to the inner wall. This preliminary intervention prevents the harmful adhesion effect from occurring in the first place, rather than requiring subsequent cleaning operations that would reduce manufacturing throughput.
3Manufacturing precision
If the inner wall structure is modified with protruding portions, then gas distribution improves and film uniformity increases, but manufacturing complexity increases
Solution Approach 1:
The protruding portions are integrated directly into the reaction container structure, merging the gas distribution function with the container wall itself. This consolidation eliminates the need for separate gas distribution components, reducing overall manufacturing complexity while achieving improved film uniformity through the geometric features of the protrusions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances manufacturing throughput by minimizing by-product adhesion, improving film uniformity, and reducing downtime, while maintaining efficient gas distribution and processing quality.
Implementation Method 1
a gas flow path with small conductance formed between the protruding portion and the heat insulator
Implementation Method 2
a heat insulator provided below the substrate support region
Data Source
AI summary
There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other.


