Reaction Container Wall Structure for Uniform Semiconductor Gas Processing

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Solution Overview

Problem

The existing substrate processing apparatuses face challenges in improving manufacturing throughput due to inefficiencies in gas distribution and film uniformity, leading to adhesion of by-products on surfaces and reduced productivity.

Innovation Solution

Incorporating a flange portion and gas flow path with small conductance to suppress the entry of processing gases into the low temperature region, thereby reducing by-product adhesion and improving gas uniformity across the substrate processing region.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If gas is supplied into the reaction container without a protruding portion, then gas flow is simple and device structure is simple, but gas distribution uniformity deteriorates and by-products adhere to surfaces

Engineering Contradiction:
Improvefilm uniformityVSAvoidreaction container structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The inner wall of the reaction container is segmented into multiple regions by adding protruding portions at different positions. These protruding portions divide the gas flow path into distinct zones, allowing differential gas distribution to different substrate areas. This segmentation enables precise control over gas flow patterns to achieve uniform film formation without requiring complex external gas distribution systems.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The protruding portions extend radially inward from the inner wall, adding a dimensional feature that creates multiple gas flow pathways. This radial protrusion structure transforms the conventional flat wall geometry into a multi-level surface, enabling gas to reach different substrate regions through varied paths and improving overall gas distribution uniformity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If processing gas enters the low temperature region freely, then gas flow is unrestricted and device operation is simple, but by-products adhere to the inner wall and productivity decreases

Engineering Contradiction:
Improvemanufacturing throughputVSAvoidby-product adhesion
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The protruding portions act as intermediary structures that intercept and redirect processing gas before it can enter the low temperature region. By positioning these protrusions strategically, they serve as physical barriers that guide gas flow along desired pathways while preventing direct access to areas where by-product adhesion would occur, thus maintaining productivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protruding portions are positioned to preemptively block the path of processing gas toward the low temperature region before by-products can form and adhere to the inner wall. This preliminary intervention prevents the harmful adhesion effect from occurring in the first place, rather than requiring subsequent cleaning operations that would reduce manufacturing throughput.

Inventive Principle:
Principle #9Preliminary anti-action

3Manufacturing precision

If the inner wall structure is modified with protruding portions, then gas distribution improves and film uniformity increases, but manufacturing complexity increases

Engineering Contradiction:
Improvefilm uniformityVSAvoidreaction container fabrication
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The protruding portions are integrated directly into the reaction container structure, merging the gas distribution function with the container wall itself. This consolidation eliminates the need for separate gas distribution components, reducing overall manufacturing complexity while achieving improved film uniformity through the geometric features of the protrusions.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances manufacturing throughput by minimizing by-product adhesion, improving film uniformity, and reducing downtime, while maintaining efficient gas distribution and processing quality.

Implementation Method 1

a gas flow path with small conductance formed between the protruding portion and the heat insulator

Methodology Applied
Scientific EffectGas flow conductance:

Implementation Method 2

a heat insulator provided below the substrate support region

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Data Source

PatentUS12163226B2Substrate processing apparatus, reaction container, method of manufacturing semiconductor device, and recording medium
Publication Date: 2024.12.10 KOKUSAI DENKI KK
  • US12163226B2 patent drawing
  • US12163226B2 patent drawing
  • US12163226B2 patent drawing

AI summary

There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other.