Reaction Vessel Auxiliary Chamber Layout for Deposit Suppression
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Solution Overview
Problem
The adhesion of deposits to the inside of a reaction vessel during film-forming processes in substrate processing apparatuses leads to particle generation, which is difficult to remove and affects the quality of semiconductor manufacturing.
Innovation Solution
A substrate processing apparatus is designed with a reaction vessel that includes a substrate retainer, a heat insulator, and an auxiliary chamber with specific gaps and covers to control the flow of process gases, preventing deposits from adhering to the heat insulator by using inert gas to maintain higher pressure in the auxiliary chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If process gas is supplied into the reaction vessel for film-forming, then film formation on substrate is achieved, but deposits adhere to the inside of the reaction vessel causing particle generation
Solution Approach 1:
An auxiliary chamber is introduced as an intermediary space between the process gas supply and the reaction vessel. This auxiliary chamber allows process gas to be supplied indirectly, preventing direct contact between process gas and the reaction vessel inner wall, thereby eliminating deposit adhesion while maintaining film formation capability
Solution Approach 2:
The reaction vessel is divided into a main reaction chamber and an auxiliary chamber. The auxiliary chamber handles gas supply functions separately, while the main reaction chamber focuses on substrate processing. This segmentation isolates the source of deposits (auxiliary chamber) from the sensitive reaction zone, preventing particle generation in the reaction vessel
2Reliability
If the auxiliary chamber is designed with gaps between the heat insulator and inner plate, then process gas flow is controlled to prevent deposit adhesion, but device complexity increases
Solution Approach 1:
Gaps are created only in specific locations where the auxiliary chamber wall contacts the heat insulator, rather than throughout the entire structure. This localized gap design provides sufficient process gas flow control to prevent deposits while minimizing the overall structural complexity of the auxiliary chamber
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses the adhesion of deposits to the reaction vessel, reducing particle generation and improving the reliability and quality of semiconductor manufacturing processes.
Implementation Method 1
by supplying inert gas into the auxiliary chamber 201a, an inner pressure of the auxiliary chamber 201a is made higher than an inner pressure of the wafer arrangement region
Data Source
AI summary
Described herein is a technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus. According to one aspect, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.