Reaction Vessel Zone Cleaning With Dual Gases and Temperature Control
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Solution Overview
Problem
The existing substrate processing apparatuses face inefficiencies in the cleaning process due to deposits adhering to the interior of the process chamber, which affects the subsequent film-forming processes and requires effective cleaning methods to prevent foreign substances from adhering to wafers.
Innovation Solution
A substrate processing apparatus with a reaction vessel divided into regions for substrate arrangement and non-substrate regions, utilizing a heater and gas supplier to control temperature and gas supply differently between these regions, employing two types of cleaning gases supplied from distinct locations to effectively clean the interior under specific temperature conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single cleaning gas is supplied uniformly to the entire reaction vessel, then the cleaning process is simple to operate, but the cleaning efficiency is insufficient due to different deposit types in different regions
Solution Approach 1:
The reaction vessel is divided into multiple regions (substrate arrangement region and non-substrate region) with different cleaning requirements. The gas supplier is configured to supply different cleaning gases to different regions simultaneously, enabling region-specific cleaning that addresses diverse deposit types without requiring manual intervention or complex sequential processes
Solution Approach 2:
Different cleaning gases with specific characteristics are supplied to different regions based on their specific cleaning needs. The first cleaning gas is supplied to the substrate arrangement region while the second cleaning gas is supplied to the non-substrate region, allowing each region to receive optimally suited cleaning conditions for its specific deposit type
2Productivity
If the entire reaction vessel is heated to high temperature for cleaning, then deposit removal is effective, but the reaction vessel material may be damaged
Solution Approach 1:
The heating system is configured to provide different temperature conditions to different regions. The substrate arrangement region can be maintained at higher temperatures effective for deposit removal, while the non-substrate region is kept at lower temperatures that prevent damage to the reaction vessel material, allowing simultaneous optimization of cleaning effectiveness and material protection
Solution Approach 2:
The temperature control system segments the reaction vessel into zones with different temperature setpoints. This enables independent temperature optimization for each region, allowing aggressive heating where deposits need removal while maintaining gentle conditions where the vessel material is vulnerable
3Productivity
If different cleaning conditions are applied to different regions, then cleaning effectiveness is improved, but the control system becomes more complex
Solution Approach 1:
The gas supplier and heater are designed as multi-functional systems that can simultaneously perform multiple cleaning operations with different parameters. A single integrated control system manages the supply of different cleaning gases and temperature control across multiple regions, eliminating the need for separate manual operations and reducing overall operational complexity despite the increased cleaning effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the cleaning efficiency by allowing for localized and parallel cleaning with gases having different characteristics, preventing damage to the reaction vessel and ensuring effective removal of deposits, thereby improving the overall processing efficiency and reducing non-uniformity.
Implementation Method 1
a heater configured to heat the first region
Implementation Method 2
cleaning gases that clean an interior of the reaction vessel
Data Source
AI summary
There is provided a technique that includes a reaction vessel including a first region in which a substrate is arranged and a second region in which no substrate is arranged; a heater configured to heat the first region; a gas supplier configured to supply a plurality of gases including cleaning gases; and a controller that controls at least one selected from the group of the gas supplier, the heater, and a cooler to clean the first region and the second region under different conditions by at least one method selected from the group of a method in which the gas supplier supplies two different kinds of cleaning gases, a method in which the gas supplier supplies one or more cleaning gases from two different locations, and a method in which the heater sets a temperature differently between the first region and the second region.