Reactive-Ion Dielectric Deposition for Void-Free Opening Fill

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Solution Overview

Problem

Existing deposition processes for dielectric material formation in electronic device fabrication often result in low-quality material with voids and seams, due to the inability to effectively control material deposition on complex structures.

Innovation Solution

The use of reactive-ion deposition (RID) processes, which employ high energy directional ions to deposit dielectric materials such as silicon oxide, silicon nitride, and silicon carbide within openings of a base structure, allowing for bottom-up growth without significant sidewall deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional deposition processes are used to form dielectric material in openings, then the process is simple and fast, but the material quality is poor with voids and seams

Engineering Contradiction:

Improvedielectric material qualityVSAvoiddeposition process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the deposition parameters by using reactive ion deposition instead of conventional deposition, controlling plasma chemistry and ion energy to achieve high-quality dielectric material formation without voids and seams

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The deposition process is segmented into multiple stages with different gas flows and power settings, allowing precise control over material deposition in complex opening structures to ensure uniform quality throughout

Inventive Principle:

Principle #1Segmentation

2Manufacturing precision

If conventional deposition processes are used, then the deposition speed is high, but uniformity of dielectric material is poor

Engineering Contradiction:

Improveuniformity of dielectric materialVSAvoiddeposition speed

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent employs dynamic control of deposition parameters during the process, adjusting gas flows and ion energy in real-time to maintain uniform material deposition across complex structures while preserving reasonable deposition speed

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The deposition process applies locally optimized conditions within different regions of the openings, ensuring uniform dielectric material quality in each specific area while maintaining overall process efficiency

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

RID processes enable the formation of high-quality dielectric materials with improved uniformity and reduced voids and seams, enhancing the reliability and performance of electronic devices.

Implementation Method 1

forming, using a reactive-ion deposition process, a dielectric material within the at least one opening

Methodology Applied

Scientific EffectReactive-ion deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 2

employ high energy directional ions to deposit dielectric materials

Methodology Applied

Scientific EffectIon beam: Ion Beam

Data Source

PatentUS20250046602A1Reactive-ion deposition processes for dielectric material formation

Publication Date: 2025.02.06 APPLIED MATERIALS INC

AI summary

A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.