Reactor Seasoning Method Suppressing Byproduct Diffusion
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Solution Overview
Problem
The accumulation of cleaning byproducts such as AlF3 in semiconductor deposition reactors leads to deteriorated film quality and reduced reproducibility, efficiency, and productivity due to their diffusion and evaporation during the dry cleaning and seasoning processes.
Innovation Solution
A method involving a dry cleaning step followed by two seasoning steps, where the first seasoning film is deposited at a lower temperature and the second at a higher temperature, using plasma atomic layer deposition to suppress the evaporation and diffusion of cleaning byproducts, maintaining the wet etch rate within a target range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry cleaning is performed by supplying cleaning gas to chemically react with and remove the film deposited on the inner surface of the reactor, then the film deposited on the substrate can be removed, but cleaning byproducts such as AlF3 are generated and diffuse into the reaction space, deteriorating the reproducibility of wet etch rate
Solution Approach 1:
The harmful cleaning byproducts (AlF3) are extracted and removed from the reaction space by introducing a purge gas that selectively carries them out through the exhaust system, preventing their accumulation and diffusion into the substrate processing environment
Solution Approach 2:
A purge gas is introduced as an intermediary substance between the cleaning process and the substrate processing environment. This purge gas acts as a carrier to transport cleaning byproducts away from the reaction space without interfering with the substrate processing
2Reliability
If the reactor is disassembled and cleaned with liquid chemicals to remove the film deposited on the parts constituting the reactor, then complete cleaning can be achieved, but the cleaning cycle is extended and productivity is reduced
Solution Approach 1:
The mechanical disassembly process is replaced with an in-situ chemical cleaning method using plasma or reactive gases that can access and clean internal surfaces without requiring physical disassembly of the reactor components
Solution Approach 2:
The dry cleaning process is designed to clean multiple surfaces and components within the reactor simultaneously through a single accessible port, making the cleaning process universal and eliminating the need for disassembly of individual parts
3Manufacturing precision
If cleaning byproducts accumulate in the reactor, then the cleaning cycle must be shortened, but the reproducibility of wet etch rate and film quality deteriorate
Solution Approach 1:
The cleaning process incorporates monitoring of byproduct accumulation levels, and the purge gas flow rate and duration are adjusted based on feedback from sensors that detect byproduct concentrations, optimizing the balance between cleaning effectiveness and cycle time
Solution Approach 2:
The purge gas flow operates continuously during and immediately after the cleaning process to maintain a constant removal of byproducts, ensuring that cleaning effectiveness is sustained throughout the entire cleaning cycle without interruption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents cleaning byproducts from spreading and deteriorating the film quality, extending the wet etch cleaning cycle, increasing reactor uptime, and improving operational efficiency.
Implementation Method 1
a cleaning gas is supplied to the reactor to chemically react with the film deposited on the inner surface of the reactor and remove it
Implementation Method 2
a gas is supplied to the reactor to deposit a certain thickness of the film on the inner surface of the reactor without a substrate loaded into the reactor
Implementation Method 3
at least one of cleaning gas, source gas, or a reactant may be activated by RF power
Data Source
AI summary
Provided is a method for seasoning a reactor in which a dry cleaning step and a first seasoning step are carried out at the first temperature, then the temperature is raised to a second temperature. The method also comprises a second seasoning step and a substrate processing step are carried out at the second temperature. The seasoning step of the disclosure suppresses dry cleaning byproducts from evaporating, spreading and re-spreading in a reactor. Thus, deterioration of the film quality deposited on a substrate is prevented, extending the wet etch cycle of the reactor and improving the uptime and the efficiency of the reactor.