Reactor Temperature Offset Control for Uniform Wafer Deposition
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Solution Overview
Problem
There is a need for improved control of the deposition process to ensure consistent and reliable deposition of charge trapping layers with desired properties across multiple reactor apparatus, particularly in high resistivity SOI structures used in RF devices, to mitigate parasitic power losses and device nonlinearity.
Innovation Solution
A reactor apparatus is controlled using a controller with a predetermined recipe that applies different temperature offsets during different process steps to compensate for temperature variations, ensuring consistent deposition of charge trapping layers by adjusting characteristics such as thickness, uniformity, and resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If high resistivity handle wafers are used in SOI structures for RF devices, then parasitic power losses are reduced, but charge inversion or accumulation layers form at the dielectric-handle wafer interface causing device nonlinearity
Solution Approach 1:
A charge trapping layer is introduced as an intermediary between the dielectric layer and the high resistivity handle wafer. This charge trapping layer captures charge carriers that would otherwise form inversion or accumulation layers at the dielectric-handle wafer interface, thereby preventing device nonlinearity while maintaining the low parasitic power loss benefits of high resistivity handle wafers
2Productivity
If temperature control is not optimized during deposition, then deposition speed is maintained, but thickness uniformity and resistivity control of charge trapping layers deteriorate
Solution Approach 1:
The patent implements dynamic temperature control during the deposition process, adjusting temperature profiles in real-time based on process step requirements. Different temperature profiles are applied during different stages of charge trapping layer deposition to optimize both deposition speed and thickness uniformity, rather than using a fixed temperature throughout the entire process
Solution Approach 2:
The patent modifies temperature parameters during the deposition process to control the properties of the charge trapping layer. By changing temperature conditions during different process steps, the system achieves better control over layer thickness uniformity and resistivity while maintaining acceptable deposition rates
3Productivity
If multiple reactor apparatus are used for deposition, then productivity is increased, but consistency of charge trapping layer properties across reactors deteriorates
Solution Approach 1:
The patent determines and applies specific temperature offsets for each reactor apparatus based on empirical measurements. These reactor-specific offsets compensate for variations between reactors, ensuring that charge trapping layers with consistent properties are deposited across multiple reactors even though each reactor may have slightly different thermal characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables reliable and efficient deposition of charge trapping layers with controlled properties, reducing parasitic power losses and device nonlinearity in RF devices by maintaining high resistivity across multiple reactors.
Implementation Method 1
receiving temperature feedback signals from temperature sensors positioned in respective zones of the reactor apparatus during the deposition process
Implementation Method 2
transmitting first power instructions to heating devices each positioned in one of the zones of the reactor apparatus, wherein the first power instructions are determined by executing feedback control using the temperature feedback signals with the applied first set of offsets and a first target temperature
Implementation Method 3
a deposition process for depositing a layer of material on a semiconductor wafer
Data Source
AI summary
A method of operating a reactor apparatus during a deposition process includes controlling the reactor apparatus to initiate the deposition process; receiving temperature feedback signals from temperature sensors positioned in respective zones of the reactor apparatus; during each process step of at least two process steps: applying a respective set of offsets to the temperature feedback signals received from the temperature sensors, wherein the set of offsets applied for each process step are predetermined for the respective process step to control a characteristic of the semiconductor wafer following the respective process step; and transmitting power instructions to heating devices each positioned in one of the zones of the reactor apparatus, wherein the power instructions are determined by executing feedback control using the temperature feedback signals with the applied set of offsets and a target temperature for the respective process step.