Read Cache Mitigates Reset Read Disturb in Memory Devices
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Solution Overview
Problem
Threshold-type memory devices suffer from reliability issues due to cumulative threshold voltage degradation caused by read disturb on resets (RDR), leading to memory operation failures, especially as the number of read disturbs increases.
Innovation Solution
Implementing a cache to expand the inter-pulse delay between read operations, allowing for longer read-to-read intervals without violating memory device specifications, thereby mitigating threshold voltage degradation without sacrificing compliance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If read operations are performed frequently to maintain memory functionality, then memory accessibility is improved, but cumulative threshold voltage degradation increases leading to reliability issues
Solution Approach 1:
The patent applies preliminary action by performing a reset operation before the memory cell threshold voltage degrades to a critical level. The reset operation is proactively executed based on predicted future degradation, preventing the memory cell from entering a failure state. This is achieved by monitoring read operation counts or elapsed time and automatically initiating reset operations in advance.
Solution Approach 2:
The patent implements feedback mechanisms to monitor the state of memory cells and adjust read operation parameters accordingly. The system tracks threshold voltage degradation through read disturb detection and uses this information to control reset operations, creating a closed-loop system that adapts to actual memory cell conditions and prevents reliability failures.
2Reliability
If inter-pulse delay between read operations is extended to reduce threshold voltage degradation, then memory reliability is improved, but memory operation speed decreases
Solution Approach 1:
The patent applies dynamics by making the inter-pulse delay variable rather than fixed. The delay duration is dynamically adjusted based on the specific memory cell state, read operation patterns, and degradation risk assessment. This allows the system to use longer delays when needed for reliability while maintaining shorter delays when memory cells are stable, optimizing both reliability and speed.
Solution Approach 2:
The patent changes the temporal parameter of read operations by implementing variable inter-pulse delays. Instead of using a constant delay period, the system adjusts the delay parameter based on memory cell conditions, read disturb detection results, and predicted degradation trajectories, allowing optimization of the reliability-speed tradeoff through parameter adaptation.
3Reliability
If reset operations are performed frequently to prevent threshold voltage degradation, then memory reliability is improved, but cumulative energy consumption increases
Solution Approach 1:
The patent applies preliminary anti-action by performing reset operations only when and where needed, based on predicted threshold voltage degradation. Instead of uniformly resetting all memory cells frequently, the system identifies specific memory cells or regions that are at risk of degradation and applies reset operations selectively to those areas, preventing unnecessary energy consumption while maintaining reliability.
Solution Approach 2:
The patent implements local quality by applying different reset operation strategies to different memory cell regions based on their individual degradation characteristics. The system monitors and identifies specific memory cells requiring reset operations and applies them locally rather than globally, optimizing energy efficiency by concentrating reset operations only where threshold voltage degradation is detected or predicted.
Data Source
AI summary
Methods and systems include memory devices with multiple memory cells configured to store data. The memory devices also include a cache configured to store at least a portion of the data to provide access to the at least the portion of the data without accessing the multiple memory cells. The memory devices also include control circuitry configured to receive a read command having a target address. Based on the target address, the control circuitry is configured to determine that the at least the portion of the data is present in the cache. Using the cache, the control circuitry also outputs read data from the cache without accessing the plurality of memory cells.


