Iterative Read Threshold Optimization for Solid State Memory

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Solution Overview

Problem

Existing solid state memory systems, such as NAND Flash, face challenges in determining optimal read thresholds, leading to increased read errors and the inability to decode certain codewords due to suboptimal read threshold settings.

Innovation Solution

A process is developed to iteratively calculate optimal read thresholds (Topt) using voltage ratios (Tratio) and local minimum voltages (Tmin), which involves generating and refining read threshold values through iterative calculations and error correction decoding, allowing for improved accuracy in interpreting stored data.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a fixed read threshold is used in solid state memory systems, then the system operation is simple, but read errors increase and codewords become uncorrectable

Engineering Contradiction:
Improveread accuracyVSAvoidthreshold determination complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by performing iterative read threshold calculations before actual data reading operations. The system pre-determines optimal read thresholds by analyzing voltage distributions and calculating separation points between stored voltage levels, ensuring accurate reading without increasing operational complexity during normal memory access

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements parameter changes by dynamically adjusting read threshold voltages based on detected voltage distributions. The system modifies threshold parameters iteratively by analyzing the separation between voltage peaks corresponding to different stored values, allowing adaptation to varying memory conditions while maintaining simple operation interfaces

Inventive Principle:
Principle #35Parameter changes

2Reliability

If suboptimal read thresholds are used, then the system operation is straightforward, but the number of read errors increases

Engineering Contradiction:
Improveerror correction capabilityVSAvoidread threshold accuracy
Core Design Contradiction:
ReliabilityVSMeasurement precision

Solution Approach 1:

The patent applies feedback by using error correction decoding results to guide iterative read threshold optimization. The system monitors decoding success rates and adjusts read thresholds accordingly, creating a feedback loop where decoding performance informs threshold selection, thereby improving both reliability and measurement precision

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent implements dynamics by making read thresholds adaptive rather than static. The system dynamically adjusts thresholds based on real-time analysis of voltage distributions and decoding performance, allowing the thresholds to evolve and optimize themselves according to actual memory conditions and error patterns

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS9305658B2Finding optimal read thresholds and related voltages for solid state memory
Publication Date: 2016.04.05 SK HYNIX MEMORY SOLUTIONS AMERICA INC
  • US9305658B2 patent drawing
  • US9305658B2 patent drawing
  • US9305658B2 patent drawing

AI summary

A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.