Rear-Contact Optoelectronic Semiconductor Body with Front-Side Openings
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Solution Overview
Problem
Existing optoelectronic semiconductor bodies face challenges in achieving high overall efficiency and cost-effective manufacturing, particularly in the design of semiconductor layer sequences that generate electromagnetic radiation, as they often require thick layers and external electrical contacts that can reduce radiation output and increase manufacturing complexity.
Innovation Solution
The design incorporates a semiconductor layer sequence with a p-n junction or quantum well structure, featuring openings that extend through the layer sequence for reduced risk of short-circuits, a translucent electrical contact layer that covers only a portion of the front-side main face, and a low thickness to enhance manufacturing efficiency and optical performance, allowing for efficient radiation emission without the need for external contacts on the radiation-emitting side.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If external electrical contact layers are added on the radiation-emitting front side to improve electrical contact, then electrical conductivity is improved, but radiation output is reduced and device complexity increases
Solution Approach 1:
The patent inverts the conventional approach by providing electrical contact exclusively through the rear side of the semiconductor body, eliminating the need for front-side contact layers. The rear-side contact layer extends through openings in the semiconductor layer sequence to establish electrical connection, allowing the front side to remain fully radiation-emitting without obstructive contact layers.
2Reliability
If the semiconductor layer sequence is made thicker to improve manufacturing stability, then manufacturing reliability is improved, but manufacturing time and cost increase
Solution Approach 1:
The patent changes the thickness parameter of the semiconductor layer sequence to a range of 0.5-5 μm (preferably 1-3 μm), which is thinner than conventional designs. This parameter change enables shorter manufacturing cycles while the opening structure and rear-side contact approach maintain manufacturing stability by providing clear pathways for contact formation and reducing process complexity.
3Reliability
If the front side is fully covered with electrical contact layer to improve electrical contact, then electrical conductivity is improved, but radiation emission efficiency is reduced
Solution Approach 1:
The patent segments the electrical contact function to be performed exclusively through the rear side, dividing the contact layer into regions that pass through openings to reach the active layer. This segmentation allows the front surface to be fully dedicated to radiation emission without contact layer obstruction, while electrical contact is achieved through the segmented rear-side contact paths.
4Ease of manufacture
If openings are added to the semiconductor layer sequence to enable rear-side contact, then ease of manufacture is improved, but risk of short-circuit increases
Solution Approach 1:
The patent introduces a separating layer as an intermediary between the rear-side contact layer and the semiconductor layer sequence. This separating layer, formed as a discontinuous layer in the openings, electrically isolates the contact layer from the active layer while allowing the contact layer to extend through the openings for electrical connection, thus preventing short-circuits while maintaining ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves a high overall electro-optical efficiency while reducing manufacturing time and costs, with optimal performance when the contact surface area is between 5% and 15% of the front-side main face, and allows for the exploitation of the Purcell effect for increased emission rates.
Implementation Method 1
an active layer (100) suitable for generating electromagnetic radiation. The active layer contains a p-n junction, a double-heterostructure or a quantum well structure such as a single quantum well (SQW) structure or a multi quantum well (MQW) structure for generating radiation
Implementation Method 2
a separating layer is arranged in the opening, or at least in a rear-side sub-region of the opening, the separating layer insulating the section of the first electrical contact layer from the semiconductor layer sequence
Data Source
AI summary
An optoelectronic semiconductor body for emitting electromagnetic radiation from the front side with a semiconductor layer sequence and a first electrical contact layer, wherein the semiconductor layer sequence comprises at least one opening that penetrates fully through the semiconductor layer sequence in the direction from the front side to the rear side that is opposite the front side, the first electrical contact layer is arranged at the rear of the semiconductor body, a section of the first electrical contact layer extends from the rear side through the opening to the front side and covers a first sub-region of a front-side main face of the semiconductor layer sequence, and a second sub-region of the front-side main face is not covered by the first electrical contact layer.