Back-Contact Solar Cell Rear Laser Patterning Without Photolithography

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Solution Overview

Problem

Conventional crystalline silicon solar cells face efficiency limitations due to shadowing from front electrodes, and their fabrication process is complicated and costly due to the need for photolithography in forming rear electrodes.

Innovation Solution

A laser-based method is used to form patterns for p-type and n-type semiconductor regions on the rear surface of a back contact solar cell, eliminating the need for photolithography and simplifying the fabrication process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography is used to form patterns for p-type and n-type semiconductor regions on the rear surface, then manufacturing precision is improved, but device complexity and fabrication cost increase

Engineering Contradiction:
Improvepattern formation precisionVSAvoidfabrication process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces the photolithography process (which uses light and chemical processes) with a direct laser writing method. The laser beam is directly scanned on the rear surface to form patterns for p-type and n-type semiconductor regions, eliminating the need for photoresist coating, exposure, and development steps. This substitution maintains manufacturing precision while significantly reducing fabrication process complexity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent extracts and removes the photolithography step from the fabrication process. By using direct laser writing to form the patterns, the complex multi-step photolithography process (including photoresist application, exposure, and development) is completely eliminated, leaving only the essential pattern formation and semiconductor region creation steps.

Inventive Principle:
Principle #2Taking out (Extraction)

2Manufacturing precision

If photolithography is used to form patterns for p-type and n-type semiconductor regions on the rear surface, then manufacturing precision is improved, but loss of time increases

Engineering Contradiction:
Improvepattern formation precisionVSAvoidfabrication time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent replaces the time-consuming photolithography process with direct laser writing. The laser beam can be rapidly scanned and focused to form patterns directly, eliminating the sequential steps of photoresist coating, exposure, and development that are inherent in photolithography. This substitution maintains pattern formation precision while dramatically reducing the total fabrication time.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The laser writing process allows for direct pattern formation without requiring preliminary photoresist coating and alignment steps. The pattern is formed directly by the laser beam scanning, which can be pre-programmed with the exact pattern coordinates, eliminating the need for separate photoresist application and exposure alignment steps that consume time in photolithography.

Inventive Principle:
Principle #10Preliminary action

3Ease of operation

If front electrodes are formed on the light-receiving face to enable electrical contact, then ease of operation is improved, but shadowing occurs reducing efficiency

Engineering Contradiction:
Improveelectrical contact capabilityVSAvoidlight absorption efficiency
Core Design Contradiction:
Ease of operationVSLoss of energy

Solution Approach 1:

The patent inverts the conventional electrode placement approach by moving all electrical contact structures to the rear surface of the solar cell instead of the front light-receiving face. The rear surface patterns form p-type and n-type semiconductor regions that provide electrical contact, completely eliminating front electrodes. This inversion resolves the shadowing problem while maintaining ease of operation for electrical contact.

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent transitions the electrical contact structures from the two-dimensional front surface to the rear surface, effectively using another dimension (the rear surface plane) to achieve the same electrical contact function. This dimensional relocation eliminates the shadowing effect on the light-receiving face while preserving the electrical contact capability through the formed semiconductor regions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances efficiency by minimizing shadowing and reducing electron-hole pair recombination while lowering fabrication costs and time.

Implementation Method 1

removing the oxide layer by irradiating laser light to the oxide layer formed on the rear surface of the substrate at predetermined intervals to form a pattern of the different conductive type semiconductor regions

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Implementation Method 2

The solar cell, which is a device converting light energy into electrical energy using a photovoltaic effect

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Data Source

PatentUS20260082726A1Back contact solar cell and fabrication method thereof
Publication Date: 2026.03.19 JINKOSOLAR MIDDLE EAST FZCO
  • US20260082726A1 patent drawing
  • US20260082726A1 patent drawing
  • US20260082726A1 patent drawing

AI summary

The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.