Rear-Side Contact Optoelectronic Semiconductor Body
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Solution Overview
Problem
Existing optoelectronic semiconductor bodies face challenges in achieving improved efficiency and electrical properties, particularly in reducing the shadowing and absorption of electromagnetic radiation by electrical contact points and ensuring homogeneous current injection.
Innovation Solution
The design includes a semiconductor body with a semiconductor layer sequence featuring a reflective configuration on the rear side, where the first and second electrical connection layers are insulated by a separating layer, and a semiconducting or electrically insulating mirror layer with distributed Bragg reflector properties, allowing for efficient reflection of emitted radiation and homogeneous current distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrical contact points are placed on the front side of the semiconductor layer sequence, then electrical connection is achieved, but shadowing and absorption of electromagnetic radiation occurs
Solution Approach 1:
The patent inverts the conventional arrangement by moving electrical contact points from the front side to the rear side of the semiconductor layer sequence. This allows the front side to remain free of contact points, eliminating shadowing and absorption of emitted radiation while maintaining reliable electrical connection through the rear-side contacts.
Solution Approach 2:
The patent transitions the electrical contact arrangement from a two-dimensional plane (front side) to utilizing the third dimension (depth/rear side) of the semiconductor structure. By placing contacts on the rear side and using vertical current injection through the active layer, the solution eliminates the conflict between contact placement and radiation emission.
2Reliability
If complex process steps such as polishing the front surface and producing metal webs are implemented, then electrical contact points can be created on the front side, but manufacturing complexity increases
Solution Approach 1:
The patent extracts the electrical contact function from the front side and relocates it to the rear side. This eliminates the need for complex front-side processing steps such as polishing, metal web production, and current spreading layer formation, significantly simplifying the manufacturing process while maintaining electrical connection reliability.
Solution Approach 2:
The electrical contacts are prepared in advance on the rear side before the semiconductor layer sequence is transferred to the final substrate. This preliminary preparation eliminates the need for subsequent complex front-side modifications and streamlines the overall manufacturing process.
3Reliability
If measures such as forming electrically insulating layers, Schottky barriers, or ion-implanted regions are implemented below contact points, then current injection control is improved, but device complexity increases
Solution Approach 1:
The patent removes the need for complex current injection control structures (insulating layers, Schottky barriers, ion-implanted regions) by relocating contacts to the rear side. The simplified rear-side contact configuration achieves effective current control without requiring these additional complex structural elements.
4Productivity
If a reflective layer is applied on the rear side of the semiconductor layer sequence, then electromagnetic radiation emission efficiency is improved, but manufacturing steps increase
Solution Approach 1:
The patent combines the reflective layer function with the electrical contact structure on the rear side. The electrical connection layers are designed to also serve as reflective elements, merging two functions into a single integrated structure and avoiding additional manufacturing steps.
Solution Approach 2:
The rear-side electrical connection layers are designed to perform multiple functions: providing electrical connection and simultaneously acting as reflective layers for electromagnetic radiation. This multi-functionality eliminates the need for separate reflective layer deposition steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the efficiency of electromagnetic radiation emission by reducing shadowing and absorption, enabling better current injection and increased current-carrying capacity without impairing radiation emission, making the semiconductor body suitable for high-operating currents.
Implementation Method 1
The separating layer is embodied at least in places as an electrically insulating mirror layer which, in particular, has distributed Bragg reflector properties
Implementation Method 2
A refractive index of the mirror layer deviates, for example, by 1 or more from the refractive index of a layer of the semiconductor layer sequence that follows the mirror layer in the direction of the front side
Implementation Method 3
the first and/or the second electrical connection layer reflects a part of the electromagnetic radiation emitted from the active zone in the direction of the rear in the direction of the front
Implementation Method 4
an active layer which is suitable for generating electromagnetic radiation. The active layer has a pn junction, a double heterostructure, a single quantum well (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation
Data Source
AI summary
The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.