Recess Filling With Controlled Voids for Lower Parasitic Capacitance
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Solution Overview
Problem
Conventional flowable material deposition techniques struggle to fill recesses on substrates effectively as device sizes decrease, leading to increased parasitic capacitance and mechanical stability issues.
Innovation Solution
A method involving deposition cycles with controlled ratios of deposition and treatment steps, using inert gases and plasma treatment to form voids within the deposited material, adjusting the void size based on the Repeat Ratio of these steps, to mitigate parasitic capacitance while ensuring mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional flowable material deposition techniques are used to fill recesses, then the recesses can be filled with insulating material, but parasitic capacitance increases and material properties deteriorate as device sizes decrease
Solution Approach 1:
The deposited material is formed with a porous structure containing voids within the recesses. This porous structure reduces the dielectric constant of the filled material, thereby reducing parasitic capacitance between device components while maintaining effective fill capability. The voids are created through controlled deposition processes that incorporate inert gas pockets within the material matrix.
Solution Approach 2:
The deposition process parameters are changed to control the formation of voids within the deposited material. By adjusting deposition conditions such as gas flow rates, pressure, and temperature, the size and distribution of voids can be controlled to optimize the balance between fill capability and parasitic capacitance reduction.
2Object-generated harmful factors
If voids are created within the deposited material to reduce parasitic capacitance, then parasitic capacitance decreases, but mechanical stability may be compromised
Solution Approach 1:
The deposited material forms a porous structure where voids are distributed throughout the material matrix. This porous structure reduces parasitic capacitance while the surrounding material framework maintains mechanical stability. The voids are not large cavities but rather a network of smaller pores that reduce dielectric constant without creating weak points.
Solution Approach 2:
The deposited material forms a composite structure combining solid material phases with void phases. This composite structure allows the solid portions to provide mechanical strength and stability while the void portions reduce the overall dielectric constant and parasitic capacitance of the filled recesses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces parasitic capacitance and maintains mechanical stability by controlling void size in substrate recesses, enhancing the performance of electronic devices.
Implementation Method 1
performing a treatment step comprising forming a plasma in the reaction chamber by applying a plasma power and treating the deposited material
Implementation Method 2
allowing the deposited material to flow into the recess in the substrate
Data Source
AI summary
A method of filling a recess on a surface of a substrate may comprise performing a deposition cycle on the substrate; allowing the deposited material to flow into the recess; and creating a void within the recess in response to the allowing the deposited material to flow. A void size of the void can be based on a ratio of a deposition repeat number of times that the deposition step is repeated to a treatment repeat number of times that the treatment cycle is repeated. The deposition cycle can comprise: providing an inert gas to the reaction chamber; performing a deposition step; and performing a treatment step. A deposition step can comprise: providing a precursor to the reaction chamber; and/or forming a deposited material from the precursor. A treatment step can comprise forming a plasma in the reaction chamber by applying a plasma power and treating the deposited material.