Semiconductor Recess Film Deposition for Conformal Step Coverage
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Solution Overview
Problem
Existing methods face challenges in forming films within recesses of semiconductor substrates, such as trenches or holes, with non-conformal growth tendencies and difficulty in achieving uniform film coverage.
Innovation Solution
A multi-step process involving exposure of the substrate to an altering agent in a plasma state, followed by an oxygen-containing substance, a modifying agent, and a film-forming agent, with controlled exposure cycles to enhance film formation in recesses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is formed in a recess using conventional methods, then film formation occurs, but the film exhibits non-conformal growth and poor step coverage
Solution Approach 1:
The film formation process is segmented into multiple distinct steps: plasma treatment step, oxygen-containing substance exposure step, modifying agent exposure step, and film-forming agent exposure step. Each step performs a specific function to progressively improve film uniformity in the recess, transforming a single complex deposition process into a sequence of controlled treatments that address different aspects of film formation independently.
Solution Approach 2:
Before the actual film formation, the substrate undergoes preliminary treatments including plasma exposure to alter surface properties, oxygen-containing substance exposure to oxidize the surface, and modifying agent exposure to prepare the surface for uniform film deposition. These preliminary actions modify the substrate surface to promote subsequent conformal film growth in the recess.
2Manufacturing precision
If the substrate is exposed to multiple substances in sequence, then film properties are improved, but processing time increases
Solution Approach 1:
The film formation employs periodic cyclic processing where the substrate is sequentially exposed to different substances (plasma, oxygen-containing substance, modifying agent, film-forming agent) in repeating cycles. Each cycle performs multiple functions: surface alteration, oxidation, modification, and film deposition. This periodic multi-step cycling achieves superior step coverage and conformal film formation while managing processing time through systematic repetition of the complete sequence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process improves film properties within recesses by selectively altering and oxidizing surfaces, promoting uniform film growth while suppressing growth on certain areas, resulting in enhanced step coverage and conformal film formation.
Implementation Method 1
exposing the substrate to an altering agent excited into a plasma state
Implementation Method 2
exposing the substrate after (a) to an oxygen-containing substance
Data Source
AI summary
There is provided a technique that includes: forming a film in a recess on a surface of a substrate by performing a cycle n times (where n is an integer of 1 or 2 or more), the cycle including: (a) exposing the substrate to an altering agent excited into a plasma state; (b) exposing the substrate after (a) to an oxygen-containing substance; (c) exposing the substrate after (b) to a modifying agent; and (d) exposing the substrate after (c) to a film-forming agent.