Recess Silicon Oxide Deposition Using Hydroxyl Distribution Control
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Solution Overview
Problem
Existing deposition methods face challenges in achieving uniform film thickness and quality within recesses on substrates, particularly in controlling the distribution of hydroxyl groups and ensuring high etching resistance of silicon oxide films.
Innovation Solution
A deposition method involving a plasma source that generates a noble gas and modifying gas plasma to adsorb hydroxyl groups, followed by sequential supply of aminosilane and oxidation gases, ensuring controlled adsorption and reaction to form a silicon oxide film with improved etching resistance and reduced film quality variation in the depth direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is deposited in a recess by reacting first and second reaction gases, then the film is formed in the recess, but the film thickness distribution becomes non-uniform and film quality varies in the depth direction
Solution Approach 1:
The patent applies preliminary action by exposing the substrate to plasma generated from noble gas and modifying gas before supplying the reaction gases. This preliminary plasma treatment adsorbs hydroxyl groups on the inner surface of the recess in a predetermined distribution, creating a prepared surface state that enables subsequent uniform film deposition. The hydroxyl group distribution is controlled in advance to ensure uniform aminosilane gas adsorption and ultimately uniform film thickness throughout the recess depth.
2Manufacturing precision
If hydroxyl groups are adsorbed on the inner surface of the recess to control film thickness distribution, then film thickness can be controlled, but the process complexity increases
Solution Approach 1:
The patent merges multiple functions into a single plasma treatment step. The plasma generated from noble gas and modifying gas simultaneously performs surface cleaning, hydroxyl group generation, and hydroxyl group distribution control. This combined approach achieves precise film thickness distribution control without requiring separate processing steps for each function, thereby reducing overall process complexity while maintaining manufacturing precision.
3Reliability
If aminosilane gas is supplied to the substrate with hydroxyl groups, then silicon oxide film is formed, but etching resistance may be insufficient without proper hydroxyl group distribution
Solution Approach 1:
The patent applies local quality by creating a non-uniform distribution of hydroxyl groups on the inner surface of the recess through controlled plasma treatment. The hydroxyl group density is higher in specific regions (such as the bottom and side walls) compared to other areas. This localized variation in hydroxyl group distribution ensures that aminosilane gas adsorbs uniformly throughout the recess, resulting in silicon oxide film with consistent etching resistance and quality across the entire film structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively distributes hydroxyl groups and aminosilane gas to achieve a silicon oxide film with uniform thickness and high etching resistance, reducing void generation and improving film quality consistency within recesses.
Implementation Method 1
exposing the substrate to a plasma generated from the noble gas and a modifying gas to adsorb a hydroxyl group on an inner surface of the recess in a predetermined distribution
Implementation Method 2
supplying the second reaction gas to the substrate on which the first reaction gas is adsorbed, thereby causing the first reaction gas to react with the second reaction gas to produce the reaction product
Implementation Method 3
depositing a film of a reaction product of a first reaction gas and a second reaction gas that react with each other in the recess
Implementation Method 4
exposing the substrate on which the film is deposited to a plasma generated from a noble gas
Data Source
AI summary
A deposition method includes: a) depositing a film of a reaction product of a first reaction gas and a second reaction gas that react with each other in the recess; and b) exposing the substrate on which the film is deposited to a plasma generated from a noble gas. a) includes: a1) exposing the substrate to a plasma generated from the noble gas and a modifying gas to adsorb a hydroxyl group on an inner surface of the recess in a predetermined distribution, a2) supplying the first reaction gas to the substrate on which the hydroxyl group is adsorbed, and a3) supplying the second reaction gas to the substrate on which the first reaction gas is adsorbed, thereby causing the first reaction gas to react with the second reaction gas to produce the reaction product.