Recess Shape Modification in Semiconductor Recesses
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Solution Overview
Problem
In semiconductor manufacturing, the shape of epitaxial structures in MOS transistors changes during processing, leading to unpredictable stress distribution and reduced transistor performance due to shape alterations during high-temperature processes, making precise control of transistor quality challenging.
Innovation Solution
A semiconductor process that includes forming gates and recesses on a substrate, followed by a surface modification process using an etching and depositing synchronous method to restore the original shape of the recess and alter its content, ensuring consistent stress induction and improved epitaxial structure bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature processing is performed to grow epitaxial structures, then the epitaxial structures can be formed, but the shape of the recess changes leading to unpredictable stress distribution
Solution Approach 1:
The patent applies preliminary action by performing a surface modification process on the recess before epitaxial growth. This process modifies the surface contents and shape of the recess in advance, so that when high-temperature epitaxial processing occurs, the recess maintains its predetermined shape and the stress distribution remains predictable and controllable.
2Manufacturing precision
If the recess shape is modified by subsequent processing, then the original etched shape is lost, but precise control of transistor quality becomes difficult
Solution Approach 1:
The patent performs surface modification as a preliminary action before epitaxial growth to establish the desired recess shape and surface contents. This preliminary shaping ensures that subsequent high-temperature processing does not alter the recess shape, thereby maintaining manufacturing precision and enabling precise control of transistor quality.
Solution Approach 2:
The patent employs parameter changes by controlling the surface modification process parameters (such as temperature, pressure, and gas composition) to achieve the desired recess shape and surface contents. By carefully adjusting these parameters, the recess is prepared in a state that maintains its shape stability during subsequent epitaxial processing, thus resolving the contradiction between manufacturing precision and shape stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process effectively recovers the original shape of the recess and enhances the bonding between the recess surface and the epitaxial structure, reducing interfacial defects and improving transistor performance by maintaining desired stress distributions.
Implementation Method 1
A surface modification process is performed on a surface of the recess to modify the shape of the recess
Implementation Method 2
A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface
Data Source
AI summary
A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.