Recessed Access Element Isolation for DRAM Cell Density

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Solution Overview

Problem

In dynamic random access memory (DRAM) manufacturing, reducing the size of memory unit cells while maintaining effective isolation between active areas is challenging, as existing technologies struggle to provide both electrical and physical barriers efficiently.

Innovation Solution

The implementation of a memory unit array with a substrate featuring first and second recessed access elements, where the first recessed access elements connect memory units to word and bit lines, and the second recessed access elements within trenched isolating barriers create both electrical and physical barriers between adjacent active areas, merging depletion regions to enhance isolation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the size of memory unit cells is reduced to increase density, then more memory cells can be placed on a single chip, but the isolation between adjacent active areas becomes insufficient

Engineering Contradiction:
Improvememory cell densityVSAvoidisolation between active areas
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The isolation structure is segmented into two distinct parts: a shallow trench isolating barrier for physical separation and a second recessed access element for electrical isolation. This segmentation allows each component to specialize in one aspect of isolation, achieving comprehensive isolation effectiveness while maintaining compact cell dimensions for high density.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The isolation portion combines two different structural elements (trenched isolating barrier and recessed access element) into a composite isolation system. The trenched barrier provides mechanical/physical isolation while the recessed access element with its depletion region provides electrical isolation, creating a multi-functional isolation structure that addresses both physical and electrical isolation requirements simultaneously.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If traditional isolation structures are used, then manufacturing is simpler, but both electrical and physical barriers cannot be efficiently provided simultaneously

Engineering Contradiction:
Improveisolation structure fabricationVSAvoiddual barrier isolation effectiveness
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent merges the physical isolation function (trenched isolating barrier) and electrical isolation function (recessed access element with depletion region) into a single integrated isolation portion. This merging allows both barrier types to be provided simultaneously within one structural unit, achieving effective dual isolation without requiring separate independent structures that would complicate manufacturing.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The isolation portion is designed as a multi-functional structure that simultaneously performs both physical barrier and electrical barrier functions. The trenched isolating barrier provides mechanical separation while the embedded recessed access element creates an electrical depletion region, making the single isolation portion universally effective for both types of isolation requirements.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively increases memory cell density by providing robust electrical and physical barriers, allowing for closer placement of active areas while maintaining data integrity and reducing cell size.

Implementation Method 1

The second recessed access element is disposed in the trenched isolating barrier and induces in the substrate a second depletion region merging with the first depletion region

Methodology Applied
Scientific EffectDepletion region: Electric Field

Data Source

PatentUS9070740B2Memory unit, memory unit array and method of manufacturing the same
Publication Date: 2015.06.30 MICRON TECHNOLOGY INC
  • US9070740B2 patent drawing
  • US9070740B2 patent drawing
  • US9070740B2 patent drawing

AI summary

A memory unit includes a substrate, at least one charge storage element, at least one first recessed access element, and an isolation portion. The substrate has a surface and the first recessed access element is disposed in an active area of the substrate and extending from the surface into the substrate. The first recessed access element is electrically connected to the charge storage element and induces in the substrate a first depletion region. The isolation portion is adjacent to the active area and extending from the surface into the substrate. The isolation portion includes a trenched isolating barrier and a second recessed access element. The second recessed access element is disposed in the trenched isolating barrier and induces in the substrate a second depletion region merging with the first depletion region.