Recessed Array Substrate Light Shielding for Larger Aperture
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Solution Overview
Problem
Existing array substrates face a low aperture issue due to increased gate area for improving light-shielding performance, which also leads to electrical anomalies in oxide semiconductor layers caused by hydrogen diffusion from high hydrogen content interlayer dielectric layers.
Innovation Solution
The implementation of recess-shaped light-shielding patterns with a bottom and side light-shielding layer forming an included angle greater than 90°, which blocks light from both the bottom and side of the oxide semiconductor layer, thereby improving light-shielding performance without increasing the plane area, and preventing hydrogen diffusion by separating the interlayer dielectric layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the area of the first gate is increased to improve light-shielding performance, then the light-shielding performance is improved, but the aperture of the array substrate decreases
Solution Approach 1:
The patent transitions from a planar light-shielding structure to a three-dimensional recess structure. The first gate is formed in a recess that extends vertically into the substrate, creating light-shielding walls on the sides and bottom. This vertical dimension allows the light-shielding pattern to block light from multiple angles without increasing the horizontal footprint, thereby maintaining aperture while improving light-shielding performance.
2Object-affected harmful factors
If the area of the first gate is increased to improve light-shielding performance, then the light-shielding performance is improved, but the hydrogen content in the interlayer dielectric layer causes electrical anomalies in the oxide semiconductor layer
Solution Approach 1:
The patent extracts the oxide semiconductor layer from direct contact with the high-hydrogen interlayer dielectric layer by forming a recess structure. The first gate is positioned in a recess that physically separates the oxide semiconductor layer from the interlayer dielectric layer, preventing hydrogen diffusion while maintaining the light-shielding function of the gate structure.
Solution Approach 2:
The recess structure acts as an intermediary barrier between the interlayer dielectric layer and the oxide semiconductor layer. This intermediate structure prevents direct interaction between hydrogen in the dielectric layer and the sensitive oxide semiconductor layer, thereby maintaining electrical stability while still allowing the gate to perform its light-shielding function.
3Object-affected harmful factors
If the first gate extends beyond the edge of the oxide semiconductor layer by at least 3 μm to improve light-shielding performance, then the light-shielding performance is improved, but the aperture and area of the light-transmitting region decrease
Solution Approach 1:
The patent utilizes the vertical dimension by forming the first gate in a recess structure. The light-shielding effect is achieved through vertical walls that extend downward into the substrate, blocking light from oblique angles without requiring horizontal extension beyond the oxide semiconductor layer edges. This maintains the light-transmitting region area while providing effective light-shielding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances light-shielding performance while maintaining a larger aperture and ensuring the electrical stability of the oxide semiconductor layer by reducing hydrogen diffusion, thus addressing the low aperture and stability issues of existing substrates.
Implementation Method 1
The oxide semiconductor layer is correspondingly formed in a recess of one of the light-shielding patterns... blocks light from both the bottom and side of the oxide semiconductor layer
Implementation Method 2
Hydrogen in the interlayer dielectric layer 115 diffuses into the oxide semiconductor layer 121, causing electrical anomalies of the oxide semiconductor layer 121
Data Source
AI summary
An array substrate and a display panel are provided. The array substrate includes a plurality of recess-shaped light-shielding patterns. An oxide semiconductor layer is correspondingly formed in a recess of one of the light-shielding patterns. In comparison with increasing a plane area for improving light-shielding performance of the light-shielding patterns, an area of an orthographic projection of the recess-shaped light-shielding patterns on the array substrate is smaller. Therefore, an area of a light-transmitting region of the array substrate is greater, thereby increasing an aperture of the array substrate.