Semiconductor device including a semiconductor element having electrodes inserted into recess portions of a conductive member
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Solution Overview
Problem
Semiconductor devices with solder-based bonding layers face issues of short circuits and cracking due to increased electrode count and thermal stress, which existing technologies have not adequately addressed.
Innovation Solution
A semiconductor device design featuring a conductive member with recessed portions and electrodes protruding from pads, where the electrodes are inserted into these recessed areas and bonded using a conductive bonding layer, which reduces the risk of short circuits and cracking by managing thermal stress and improving bond strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of electrodes is increased according to circuits included in the semiconductor element, then the functionality and circuit capacity are improved, but short circuit in the plurality of electrodes may occur due to the fused bonding layer
Solution Approach 1:
The bonding layer is segmented into multiple independent bonding layers, each corresponding to a specific electrode. These segmented bonding layers are arranged such that they are separated from each other, preventing the spread of fused material between adjacent electrodes. This segmentation allows for increased electrode density while maintaining electrical isolation between neighboring electrodes, thus enabling higher circuit capacity without compromising reliability.
2Strength
If the bonding layer contains solder, then the bonding strength between the semiconductor element and conductive member is improved, but thermal stress causes a crack in the bonding layer
Solution Approach 1:
The bonding structure is divided into multiple independent bonding layers, each confined to its own recessed portion. This segmentation isolates thermal stress within individual bonding layers, preventing stress propagation that would cause cracks across the entire bonding interface. Each segmented bonding layer can accommodate thermal expansion independently, maintaining bonding strength while resisting crack formation under thermal stress.
Solution Approach 2:
The bonding layer is localized within recessed portions of the conductive member, creating a specific geometric configuration. This local quality design allows the bonding material to be contained within defined boundaries, where the recessed structure provides mechanical support and stress distribution. The localized bonding configuration optimizes both bonding strength at the interface and crack resistance by preventing stress concentration from propagating through the entire bonding layer.
3Strength
If a bonding layer is used to bond the semiconductor element to the conductive member, then the bonding strength is improved, but the complexity of the device structure increases
Solution Approach 1:
The bonding layer formation process is merged with the existing manufacturing processes of the conductive member and semiconductor element. The recessed portions are formed as integral parts of the conductive member structure, and the bonding layers are applied using standard deposition or sintering techniques already employed in semiconductor fabrication. This merging approach achieves strong bonding without adding significant structural complexity, as the bonding layers are seamlessly integrated into the existing device architecture rather than being added as separate complex components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents short circuits and suppresses crack generation in the bonding layer, enhancing the reliability and durability of the semiconductor device by managing thermal stress and improving bond strength.
Implementation Method 1
a bonding layer that is conductive and that is arranged in each of the plurality of recessed portions. The plurality of electrodes are separately inserted into the plurality of recessed portions. The conductive member and the plurality of electrodes are bonded through the bonding layers.
Data Source
AI summary
Provided is a semiconductor device including a conductive member including a main surface facing one side in a thickness direction; a semiconductor element including a plurality of pads facing the main surface of the conductive member; and a plurality of electrodes protruding from the plurality of pads toward the other side in the thickness direction. The conductive member includes a plurality of recessed portions recessed from the main surface toward the other side in the thickness direction. The semiconductor device further includes a bonding layer that is conductive and that is arranged in each of the plurality of recessed portions. The plurality of electrodes are separately inserted into the plurality of recessed portions. The conductive member and the plurality of electrodes are bonded through the bonding layers.