Recessed Extraction Plate Intercepting Etched Species
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Solution Overview
Problem
Conventional substrate processing techniques, such as inductively coupled plasma etch processes, are inefficient in recovering valuable materials like platinum and ruthenium, as they often redeposit these materials on apparatus surfaces and evacuate them outside the processing area, making it difficult to reclaim and reuse them.
Innovation Solution
A processing apparatus with a plasma chamber and an extraction assembly that directs ions to a substrate to etch species, featuring a recessed extraction plate and beam blocker to intercept and condense etched species, enhancing the collection efficiency of valuable materials by controlling their distribution and redeposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional ICP etch processes are used to pattern device structures, then etching capability is achieved, but etched material is dispersed and redeposited over large areas within the apparatus
Solution Approach 1:
The patent extracts the harmful effect of material dispersion by introducing a beam blocker that physically blocks and redirects sputtered material. The beam blocker captures material that would otherwise disperse and redeposit on chamber walls, concentrating it instead onto a specific collection surface where it can be recovered.
Solution Approach 2:
The beam blocker serves as an intermediary element between the substrate and the chamber walls. It intercepts sputtered material in the gas phase and redirects it to a controlled location, preventing direct redeposition on chamber walls and enabling material recovery through controlled condensation on the beam blocker surface.
2Reliability
If in-situ cleaning processes are used to remove redeposited material, then process repeatability is maintained, but material is placed into the effluent stream
Solution Approach 1:
The patent converts the harmful redeposition of material on chamber walls into a beneficial collection process. By positioning the beam blocker to intercept sputtered material, the system transforms what would be waste material lost to effluent during cleaning into recoverable material accumulated on the beam blocker surface, which can then be reclaimed.
Solution Approach 2:
Instead of allowing material to be discarded into the effluent stream during in-situ cleaning, the patent enables recovery by capturing material on the beam blocker during the etching process itself. The beam blocker accumulates material that would otherwise be lost, allowing for subsequent recovery and reuse.
3Loss of substance
If ex-situ cleaning is performed to recover material from components, then material recovery is attempted, but the process is cumbersome due to multiple components
Solution Approach 1:
The patent extracts material collection from multiple chamber components and consolidates it onto a single beam blocker component. By capturing material during the etching process on the beam blocker, the system eliminates the need to clean multiple components for material recovery, simplifying the process to only requiring cleaning of the beam blocker.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases the recovery of precious metals by improving collection efficiency, reducing operational costs, and minimizing environmental impact through more effective material reuse and reduced maintenance needs.
Implementation Method 1
conventional inductively coupled plasma (ICP) etch processes used to pattern device structures by plasma or ion beam etching may result in the sputtered materials being dispersed
Implementation Method 2
an extraction assembly configured to direct ions from the plasma to a substrate, wherein the ions generate etched species
Implementation Method 3
the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species
Data Source
AI summary
A processing apparatus may include a plasma chamber to house a plasma; and an extraction assembly disposed along a side of the plasma chamber. The extraction assembly may be configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate; and wherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species.


