Recessed Feature Metal Fill Using Sequential Infiltration Synthesis
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Solution Overview
Problem
Existing semiconductor fabrication processes face challenges in filling recessed features on substrates without the need for complex and costly lithography processes, as methods like HDP and SACVD often fail to achieve desired gap-fill results.
Innovation Solution
Employing a sequential infiltration synthesis process to form structures on substrates, which involves irradiating a photosensitive layer with electromagnetic radiation to create regions with varying concentrations of —OH groups, followed by repeated infiltration cycles with metal species and reactants to fill recessed features, and then removing non-infiltrated layers using etchants and plasmas to form metal-containing layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods (HDP, SACVD, LPCVD) are used for gap-fill, then deposition can be performed, but desired gap-fill results are not achieved
Solution Approach 1:
The patent employs sequential infiltration synthesis that utilizes controlled parameter changes including varying precursor exposure times, temperature gradients, and reactive gas flows to enable complete gap-fill. The process transitions from conventional single-step deposition to multi-cycle infiltration where parameters are adjusted between cycles to progressively fill recessed features without voids
Solution Approach 2:
The gap-fill process uses periodic infiltration cycles alternating between precursor introduction, reaction periods, and purge phases. This periodic action allows material to progressively infiltrate deep recessed features in controlled stages, ensuring complete filling while maintaining surface quality and preventing defect formation
2Manufacturing precision
If lithography processes are used for patterning, then features can be formed, but process complexity and cost increase
Solution Approach 1:
The photosensitive layer performs self-patterning through selective infiltration during the sequential synthesis process. Regions with different —OH group concentrations automatically differentiate material uptake, creating patterns without external lithography intervention. The material distribution is driven by inherent chemical gradients rather than photopatterning
Solution Approach 2:
The photosensitive layer acts as an intermediary that translates electromagnetic radiation exposure into spatially varying chemical reactivity. By controlling —OH group distribution through selective irradiation, the layer mediates between the deposition process and the desired pattern, enabling lithography-free feature formation through chemical rather than optical patterning
3Adaptability or versatility
If photosensitive layer irradiation is performed to create —OH concentration gradients, then selective infiltration is enabled, but additional process steps are required
Solution Approach 1:
The patent combines the photosensitive layer treatment and infiltration synthesis into a single integrated process flow. The electromagnetic radiation exposure that creates —OH gradients is performed in-situ before infiltration begins, merging patterning and deposition functions. This eliminates separate lithography and deposition tool transfers, improving throughput while maintaining selective infiltration capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables effective filling of recessed features without lithography, reducing process complexity and cost, while forming seamless metal-containing layers within the features.
Implementation Method 1
irradiating select regions of the photosensitive layer with electromagnetic radiation thereby forming a first region having a first concentration of —OH groups and a second region having a second concentration of —OH
Implementation Method 2
performing a sequential infiltration synthesis process thereby forming a first infiltrated photosensitive layer in the first region
Implementation Method 3
performing a sequential infiltration synthesis process thereby forming a first infiltrated photosensitive layer in the first region
Implementation Method 4
removing a residual component of the second infiltrated photosensitive layer comprises contacting the residual organic component with a plasma generated from an oxygen containing gas
Data Source
AI summary
Methods for filling a recessed feature on a substrate employing metal sequential infiltration synthesis processes are disclosed. The disclosed methods include forming an organic layer within a recessed feature and introducing metal species into the organic layer to allow the formation of a metal seed layer. A bulk metal layer can subsequently be formed from the metal seed layer to fill the recessed feature.