Recessed Gate Electrodes for Electrical Isolation in Semiconductor Devices
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Solution Overview
Problem
Semiconductor devices face challenges in achieving greater reliability and higher operating speeds due to complexity, particularly in preventing electrical shorts between gate electrodes and active contacts, which can lead to reduced reliability.
Innovation Solution
The semiconductor device design includes recessed gate electrodes with recessed top portions adjacent to an insulation pattern, which electrically isolates the gate electrodes from each other and reduces the likelihood of electrical shorts, enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate electrodes are positioned close to active contacts to increase device density, then productivity is improved, but electrical shorts between gate electrodes and active contacts may occur, reducing reliability
Solution Approach 1:
The gate electrode is divided into two distinct parts: a first part positioned away from the active contact and a second part positioned closer to the active contact. This segmentation allows the first part to maintain proper electrical isolation while the second part enables closer positioning to increase device density and productivity.
Solution Approach 2:
Different portions of the gate electrode structure are assigned different functions: the first part provides electrical isolation from the active contact, while the second part enables close positioning for high density. This local differentiation of quality and function resolves the contradiction between reliability and productivity.
2Reliability
If gate electrodes are recessed to prevent electrical shorts, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The gate electrode is segmented into two parts with different positioning strategies: the first part is recessed to ensure electrical isolation and reliability, while the second part maintains a standard position. This segmentation achieves reliable electrical isolation without requiring complete recession of the entire gate electrode, thereby reducing manufacturing complexity.
3Productivity
If gate electrodes are positioned close to insulation patterns to increase density, then productivity is improved, but electrical shorts between gate electrodes and insulation patterns may occur, reducing reliability
Solution Approach 1:
The gate electrode is divided into a first part positioned away from the insulation pattern and a second part positioned closer to it. This segmentation allows the first part to maintain proper electrical isolation from the insulation pattern while the second part enables closer positioning to increase device density.
Solution Approach 2:
Different portions of the gate electrode are assigned different spatial relationships with the insulation pattern: the first part maintains distance for electrical isolation, while the second part positions closer for density. This local quality differentiation resolves the contradiction between productivity and reliability.
Data Source
AI summary
A semiconductor device can include a first active pattern on a substrate, the first active pattern including a plurality of first active regions that protrude from the substrate. A second active pattern can be on the substrate including a plurality of second active regions that protrude from the substrate. A first gate electrode can include an upper portion that extends over the first active pattern at a first height and include a recessed portion that extends over the first active pattern at a second height that is lower than the first height of the first gate electrode. A second gate electrode can include an upper portion that extends over the second active pattern at a first height and include a recessed portion that extends over the second active pattern at a second height that is lower than the first height of the second gate electrode. An insulation pattern can be located between, and directly adjacent to, the recessed portion of the first gate electrode and the recessed portion of the second gate electrode, the insulation pattern electrically isolating the first and second gate electrodes from one another.