Recessed Injector Base in Plasma Processing Apparatus
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Solution Overview
Problem
Plasma processing apparatuses with center gas introduction mechanisms face issues of reduced lifespan due to electric field concentration on reactive gas injector components and radical exposure affecting seals, leading to premature wear and deterioration.
Innovation Solution
The apparatus is designed with a recessed injector base within the dielectric plate, reducing electric field exposure to the injector base and positioning seals in areas with lower radical concentrations, thereby minimizing the impact of both electric field loads and radical aggression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the injector protrusion is positioned close to the holding stage for efficient gas supply, then the plasma processing efficiency is improved, but the electric field concentrates on the injector front end causing excessive temperature rise and reduced lifespan
Solution Approach 1:
The dielectric plate serves as an intermediary structure that shields the injector base from direct electric field exposure. The injector is recessed into the dielectric plate, which has high dielectric strength and prevents electric field concentration on the injector components while still allowing reactive gas to be supplied efficiently to the plasma processing region.
Solution Approach 2:
The injector base is nested within the dielectric plate structure, with the supply hole formed through the dielectric plate. This nesting arrangement protects the injector components from the harsh plasma environment and electric field while maintaining the functionality of gas supply to the processing chamber.
2Productivity
If the injector base is exposed to the electric field region for direct plasma processing, then the plasma generation efficiency is improved, but the seals are exposed to high radical concentrations causing deterioration and reduced lifespan
Solution Approach 1:
The dielectric plate acts as a protective intermediary barrier between the seals and the plasma environment. The seals are positioned on the outer surface of the dielectric plate, away from the high radical concentration region inside the processing chamber, while the dielectric plate itself withstands the plasma environment and transmits microwaves for plasma generation.
Solution Approach 2:
Different regions of the apparatus are designed with different protective qualities. The inner surface of the dielectric plate facing the plasma chamber is designed to withstand high radical concentrations and electric fields, while the outer surface provides a protected environment for seals and other sensitive components, creating a gradient of protective quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration extends the lifespan of both the injector components and seals, ensuring more efficient and prolonged plasma processing operations by reducing electric field concentration and radical exposure.
Implementation Method 1
a microwave generator (15) which generates a microwave for exciting plasma
Implementation Method 2
a dielectric plate (16) which is provided at a location facing the holding stage (14) and transmits a microwave into the processing container (12)
Implementation Method 3
an electric field is generated at a location between the holding stage (14) and the dielectric plate (16)
Data Source
AI summary
A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.