Recessed Interconnection Layer for Thermal Stress Distribution

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Solution Overview

Problem

The existing power semiconductor modules face challenges in effectively dissipating heat due to thermal stress on bonding films, which can lead to peeling off and reduced reliability.

Innovation Solution

A semiconductor module design featuring a recess portion on the interconnection layer to mitigate thermal stress, with a stacked structure of metal films, insulating layers, and a heat transfer plate for enhanced heat dissipation, and using bare chips to reduce package height and increase heat dissipation properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a flat interconnection layer is used to mount semiconductor devices, then the structure is simple and manufacturing is easy, but thermal stress concentrates on the bonding film causing peeling and reduced reliability

Engineering Contradiction:
Improvebonding film reliabilityVSAvoidinterconnection layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The interconnection layer is designed with different local structures: a recess portion where the semiconductor device is mounted and a protruding portion extending toward the heat transfer plate. This local differentiation allows stress distribution while maintaining manufacturing feasibility through standard semiconductor fabrication processes.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The recess portion and protruding portion create a curved, non-planar surface on the interconnection layer. This curvature design helps distribute thermal stress away from the bonding film interface, preventing peeling while maintaining structural integrity during temperature cycling.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Temperature

If traditional heat dissipation structures are used, then the package height is smaller, but heat dissipation efficiency is insufficient and thermal stress increases

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidpackage height
Core Design Contradiction:
TemperatureVSLength of moving object

Solution Approach 1:

The protruding portion of the interconnection layer extends vertically toward the heat transfer plate, creating a three-dimensional heat conduction path. This dimensional transition from planar to vertical heat dissipation improves thermal efficiency by reducing thermal resistance between the semiconductor device and heat transfer plate.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If the interconnection layer surface is made flat for easy manufacturing, then manufacturing precision is easier to achieve, but thermal stress cannot be effectively distributed

Engineering Contradiction:
Improvesurface flatnessVSAvoidthermal stress distribution
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The recess portion provides a localized flat mounting surface for the semiconductor device, ensuring good bonding film contact and manufacturing precision. Simultaneously, the protruding portion extends outward to distribute thermal stress, combining both requirements in different locations of the same interconnection layer.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively reduces thermal stress and enhances heat dissipation, improving the reliability and efficiency of the semiconductor module by distributing thermal loads and maintaining electrical conductivity.

Implementation Method 1

a heat transfer plate disposed on the insulating layer

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a first metal film disposed in the recess portion of the interconnection layer via a bonding film

Methodology Applied
Scientific EffectThermal stress: Thermal Expansion

Data Source

PatentUS11476225B2Recess portion in the surface of an interconnection layer mounted to a semiconductor device
Publication Date: 2022.10.18 KK TOSHIBA
  • US11476225B2 patent drawing
  • US11476225B2 patent drawing
  • US11476225B2 patent drawing

AI summary

A semiconductor module includes: a board; a semiconductor device disposed on the board, a first surface of the semiconductor device closer to the board being connected to the board; an interconnection layer to which a second surface of the semiconductor device opposite to the first surface is connected, and which has a recess portion on an opposite surface to a surface closer to the semiconductor device; a first metal film disposed in the recess portion of the interconnection layer via a bonding film, and that is electrically connected to the interconnection layer; an insulating layer disposed on the first metal film; and a heat transfer plate disposed on the insulating layer.