Recessed Passive Elements in Semiconductor Isolation Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing complexity and integration demands in semiconductor devices pose challenges in fabricating reliable and high-speed semiconductor devices with both active and passive components, as existing methods struggle to effectively integrate passive circuit elements with active regions without compromising device reliability and integration.
Innovation Solution
A semiconductor device is fabricated by forming a device isolation pattern on a substrate with a recessed portion, where a passive circuit element is placed on the bottom surface of the recess, and a dummy layer is used to form both active and passive components, allowing for the integration of passive elements below the active regions while maintaining device reliability and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If passive circuit elements are integrated with active regions in conventional methods, then device complexity and integration are improved, but device reliability deteriorates due to fabrication challenges
Solution Approach 1:
The patent places passive circuit elements in the vertical dimension below the active regions by forming recesses in the device isolation pattern. This allows passive elements to be positioned at a lower level while active regions remain at the upper level, achieving integration without lateral interference and maintaining fabrication reliability.
Solution Approach 2:
The device is segmented into distinct vertical levels: passive circuit elements are formed in recesses at a lower level, while active regions are formed at an upper level. This segmentation allows independent optimization of each component type while achieving integration, resolving the contradiction between integration complexity and fabrication reliability.
2Adaptability or versatility
If more components are employed to meet performance demands, then device functionality is improved, but manufacturing difficulty increases
Solution Approach 1:
By utilizing the vertical dimension to position passive elements below active regions, the patent enables more components to be packed into the device without increasing lateral complexity. The recess structure provides a dedicated space for passive elements that does not interfere with active region fabrication, thereby improving functionality while maintaining ease of manufacture.
3Device complexity
If passive elements are placed below active regions, then integration is improved, but manufacturing precision requirements increase
Solution Approach 1:
The device isolation pattern serves as an intermediary structure that defines the recess geometry. By forming recesses within the isolation pattern rather than directly in the substrate, the patent creates a controlled environment that simplifies precision requirements. The isolation pattern acts as a template that guides the positioning and depth of passive element recesses, reducing the overall manufacturing precision burden.
Data Source
AI summary
A semiconductor device includes a substrate, a device isolation pattern and a passive circuit element. The device isolation pattern is located on the substrate, delimits an active region of the substrate, and includes a recessed portion having a bottom surface located below a plane coincident with a surface of the active region. The passive circuit element is situated in the recess so as to be disposed on the bottom surface of the recessed portion of the device isolation pattern.