Electric-Field Reconfigurable Optical Layer for Fast IR Index Tuning
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Solution Overview
Problem
Conventional electro-optic materials struggle to achieve large refractive index changes at high reconfiguration speeds, especially in infrared wavelengths, limiting their utility in reconfigurable imaging applications.
Innovation Solution
Utilizing phase-change materials like perovskite nickelate and tungsten oxide (WO3) with a perovskite structure, integrated with a colossal-K dielectric layer, to enable refractive index changes of more than 1 in the infrared spectrum at speeds exceeding 1 kHz through electric field control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional electro-optic materials are used for refractive index modulation, then device structure is simple, but refractive index change is limited to less than 10^-2 and reconfiguration speed is below 1 kHz
Solution Approach 1:
The patent changes the material parameter from conventional electro-optic materials to phase-change materials (GST, VO2, nickelates), enabling refractive index changes greater than 1 at reconfiguration speeds exceeding 1 kHz through electric field control
Solution Approach 2:
The patent employs composite material structures combining phase-change materials with other functional layers to achieve both large refractive index modulation and high-speed reconfiguration while maintaining device operability
2Length of moving object
If liquid crystals are used to achieve refractive index change, then refractive index change is sizable (just below 1), but tuning speed is slow (below 10 milliseconds)
Solution Approach 1:
The patent transitions from liquid crystal material to phase-change materials (GST, VO2, nickelates), changing the fundamental material parameter to achieve both sizable refractive index changes (greater than 1) and fast tuning speeds (exceeding 1 kHz)
3Quantity of substance
If charge-injection into semiconductors is used to modulate refractive index, then free carrier charge can be significant (more than 10^19 cm^-3), but refractive index change is limited to below 10^-2
Solution Approach 1:
The patent uses composite material systems combining phase-change materials with electrode structures to achieve large refractive index modulation through electric field control, overcoming the limitation of conventional semiconductor charge-injection methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for significant and rapid reconfiguration of optical properties, enabling high-speed modulation and tunability of refractive indices in infrared wavelengths, suitable for applications such as reconfigurable infrared lenses and mirrors.
Implementation Method 1
electrically reconfigurable infrared optical elements or pixels comprising a phase-change material; the phase-change material having one or more optical properties that can be continuously changeable or reconfigurable by applying an electric field
Implementation Method 2
Refractive index tuning by nonlinear electro-optic Kerr and Pockels effects
Implementation Method 3
Refractive index tuning by nonlinear electro-optic Kerr and Pockels effects
Implementation Method 4
utilizing phase-change materials like perovskite nickelate and tungsten oxide (WO3) with a perovskite structure
Data Source
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AI summary
An optical apparatus may comprise: an electrically reconfigurable optical layer comprising at least one phase-change material, wherein an optical property of the phase-change material is reconfigurable by an electric field; an optically transparent top electrode and a bottom electrode, the top and bottom electrodes configured to apply the electric field to the electrically reconfigurable optical layer, wherein the electrically reconfigurable optical layer is disposed between the optically transparent top electrode and the bottom electrode; and a colossal-K dielectric layer disposed between the electrically reconfigurable optical layer and the bottom electrode. The phase-change material of the electrically reconfigurable optical layer may comprise phase-change nickelate or tungsten oxide. The phase-change material of the electrically reconfigurable optical layer may have a perovskite structure. The phase-change nickelate or tungsten oxide may enable to actuate large refractive index changes of more than 1 in infrared wavelength spectrums at high speeds of phase reconfiguration of more than 1 kHz by applying the electric field to the phase-change material.