Reconstituted Wafer Bonding for Semiconductor Die
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Solution Overview
Problem
The existing methods for bonding semiconductor dies to substrates result in low production throughput and high defect rates, particularly when forming stud bumps at the wafer level and handling individual dies.
Innovation Solution
A method involving a reconstituted panel of semiconductor dies is used, where the panel is disposed over a substrate, and a first interconnect structure is formed and bonded between the substrate and the dies, allowing for high-density interconnects and efficient packaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If individual semiconductor die are handled and bonded separately to substrates, then bonding precision can be maintained, but production throughput is reduced and defect rates increase
Solution Approach 1:
Multiple semiconductor dies are reconstituted into a wafer-form panel that is bonded to the substrate as a single unit. This merging approach allows parallel processing of multiple dies simultaneously, dramatically increasing production throughput while maintaining bonding precision through the collective stability of the wafer structure.
Solution Approach 2:
The semiconductor dies are pre-assembled into a reconstituted wafer-form panel with proper alignment and positioning before bonding to the substrate. This preliminary organization ensures that when the panel is bonded, all dies are already in their correct positions, eliminating the need for individual handling and positioning during the bonding process.
2Productivity
If stud bumps are formed at the wafer level, then formation speed increases, but uniformity of bump height becomes difficult to achieve
Solution Approach 1:
Multiple dies are reconstituted into a wafer-form panel that is processed together as a single unit. This merging allows uniform bump formation across all dies in the panel through simultaneous processing, achieving both high speed and uniformity that cannot be obtained when processing individual dies separately.
Solution Approach 2:
The reconstituted wafer panel allows different regions to be optimized for specific functions. Each die within the panel can have locally optimized bump characteristics while maintaining overall uniformity across the entire panel through controlled processing conditions.
3Reliability
If meticulous handling of individual die and substrate is performed, then bonding quality can be maintained, but production throughput is reduced
Solution Approach 1:
Multiple dies are combined into a reconstituted wafer panel that is handled and bonded as a single unit. This approach maintains bonding quality through the structural integrity of the panel while achieving high throughput by processing multiple dies simultaneously without requiring meticulous individual handling.
Data Source
AI summary
A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.