Reconstructed 3DIC Stitching Dies for Dense Multi-Layer Interconnects

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Solution Overview

Problem

Conventional 3D stacked integrated circuit (3DIC) packaging approaches are limited by passive silicon interposers and coarse interconnect density, requiring larger bottom die sizes and yielding low interconnect density, while also being restricted to a specific footprint, which hinders efficient communication between dies.

Innovation Solution

The proposed solution involves reconstructing 3DIC structures where each die functions as both a functional chip and a stitching device, forming a communication bridge between adjacent dies, using hybrid bonding and microbumps to create a high-density interconnect fabric, allowing for reduced die sizes and flexible communication paths between all package levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If conventional 3DIC packaging approaches use passive silicon interposers and die-to-die stacking, then structural stability is improved, but interconnect density deteriorates and device footprint increases

Engineering Contradiction:
Improvestructural stabilityVSAvoidinterconnect density
Core Design Contradiction:
Stability of the object's compositionVSQuantity of substance

Solution Approach 1:

The patent merges the structural support function and interconnection function into a single integrated silicon interposer. The interposer contains both functional dies and stitching dies that provide mechanical support and electrical interconnection simultaneously, eliminating the need for separate passive support structures while achieving high interconnect density through the stitching die network.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The stitching dies in the interposer serve multiple functions: they provide mechanical structural stability, establish electrical interconnections between adjacent dies, and enable signal routing. This multi-functionality allows the same structural element to simultaneously improve stability while increasing interconnect density, resolving the technical contradiction.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Ease of manufacture

If conventional 3DIC approaches use a super-set footprint bottom die, then manufacturing simplicity is improved, but adaptability deteriorates

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidfootprint flexibility
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The interposer is segmented into multiple stitching dies arranged in a grid pattern, each capable of independently supporting and interconnecting adjacent functional dies. This segmentation allows the interposer to be manufactured using standard wafer fabrication processes while providing flexible adaptation to different die layouts and package footprints, as the stitching die network can be configured to match various design requirements.

Inventive Principle:
Principle #1Segmentation

3Device complexity

If conventional packaging uses coarse interconnect density, then manufacturing complexity is reduced, but communication latency increases

Engineering Contradiction:
Improvemanufacturing complexityVSAvoidcommunication latency
Core Design Contradiction:
Device complexityVSLoss of time

Solution Approach 1:

The patent changes the interconnect density parameter from coarse to fine by implementing a high-density stitching die network in the interposer. The stitching dies are arranged in a dense grid pattern with small pitch, enabling short communication paths between adjacent functional dies. This parameter change reduces communication latency while maintaining manufacturing feasibility through standardized semiconductor fabrication processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables a full 3DIC interconnect fabric among all dies, providing high connection density, lower latency, and smaller z-height, while allowing for minimalist die functionality and flexible communication paths, overcoming the limitations of conventional packaging methods.

Implementation Method 1

bonding may be wafer-on-wafer in which the second plurality of dies is in a second reconstructed wafer, or chip-on-wafer where the second plurality of dies are discrete, and a second gap fill material is subsequently applied around the second plurality of dies after hybrid bonding

Methodology Applied
Scientific EffectHybrid bonding: Welding

Data Source

PatentUS20240321833A1Fully Interconnected Heterogeneous Multi-layer Reconstructed Silicon Device
Publication Date: 2024.09.26 APPLE INC
  • US20240321833A1 patent drawing
  • US20240321833A1 patent drawing
  • US20240321833A1 patent drawing

AI summary

Reconstructed 3DIC structures and methods of manufacture are described. In an embodiment, one or more dies in each package level of a 3DIC are both functional chips and/or stitching devices for two or more dies in an adjacent package level. Thus, each die can function as a communication bridge between two other dies/chiplets in addition to performing a separate chip core function.