Rectifier Circuit Self-Clamping MOSFET Avalanche Mode
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Solution Overview
Problem
Existing rectifier circuits face power loss and instability issues due to high drain-source breakdown voltages in linear mode, particularly in modern MOSFET transistors with small cell structures, leading to potential component destruction during high voltage and current conditions.
Innovation Solution
The rectifier circuit employs a MOSFET transistor with a drain-source breakdown voltage matching the clamping voltage, operating in avalanche mode instead of linear mode, which reduces power losses and increases load capacity, using transistors like planar or trench DMOSFETs to distribute power loss uniformly and avoid charge carrier injection into the gate oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If MOSFET transistor is operated in linear mode with high drain-source breakdown voltage, then voltage clamping protection is provided, but conducting state power losses increase and component destruction may occur
Solution Approach 1:
The patent changes the operating mode parameter from linear mode to avalanche mode, and selects a MOSFET transistor with drain-source breakdown voltage corresponding to the clamping voltage. This parameter change enables the transistor to operate in avalanche mode during overvoltage conditions, significantly reducing conducting state power losses while maintaining voltage clamping protection capability.
2Volume of moving object
If modern MOSFET transistors with small cell structures are used, then device size is reduced, but instability and potential destruction occur in linear mode at high voltage and current
Solution Approach 1:
The patent changes the operating mode from linear mode to avalanche mode, which is stable for modern MOSFET transistors with small cell structures. The drain-source breakdown voltage is selected to correspond to the clamping voltage, enabling these compact transistors to operate reliably during overvoltage conditions without destruction, thus maintaining both small size and high reliability.
3Loss of energy
If MOSFET transistor with drain-source breakdown voltage matching clamping voltage is used, then power losses are reduced, but precise voltage matching is required
Solution Approach 1:
The patent employs a self-clamping mechanism where the MOSFET transistor's intrinsic drain-source breakdown voltage automatically corresponds to the required clamping voltage. This self-service approach eliminates the need for external clamping circuits or precise manual voltage matching, reducing power losses while simplifying the design and reducing manufacturing complexity.
4Loss of energy
If synchronous rectifier with additional circuit elements is used, then conducting state power losses are reduced, but circuit complexity increases
Solution Approach 1:
The patent extracts and eliminates the complex additional circuit elements (differential amplifier, current amplifier stage, Zener diode protection circuitry) from the synchronous rectifier design. By using a MOSFET transistor operated in avalanche mode with self-clamping capability, the solution reduces conducting state power losses while significantly simplifying the overall circuit structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces conducting state power losses and enhances load capacity while allowing the use of small cell size transistors, such as trench MOSFETs, by leveraging the avalanche mode for efficient voltage clamping and protection against overvoltages.
Implementation Method 1
the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal
Data Source
AI summary
A rectifier circuit is described, which includes a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, an electronic circuit which includes at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit. In addition, a method is provided for operating a rectifier circuit which contains a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor being selected in accordance with the clamping voltage between the cathode terminal and the anode terminal, and the MOSFET transistor being operated in the avalanche mode.