Rectilinear Lithographic Seams for Multi-Field Die Layout

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Solution Overview

Problem

The introduction of advanced lithographic techniques leads to reduced lithographic field sizes, necessitating die splitting into multiple fields, which poses challenges for design efficiency and layout, particularly at the seams between these fields.

Innovation Solution

Implementing a nonlinear and rectilinear lithographic seam, or 'die mask zipper', between adjacent fields to allow overlapping fields and enhance design flexibility, while maintaining minimal footprint and reducing waste.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If high-NA EUV lithography is used to pattern smaller features below 30 nm, then manufacturing precision is improved, but the lithographic field size is reduced by half

Engineering Contradiction:

Improvepatterned feature sizeVSAvoidlithographic field size

Core Design Contradiction:

Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The die is divided into multiple lithographic fields that are stitched together to form the complete die structure. This segmentation allows each field to be patterned with high precision using high-NA EUV lithography while the overall die area can still accommodate large devices through the combination of multiple fields.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The solution transitions from a single two-dimensional lithographic field to a multi-field arrangement that effectively adds a dimensional aspect through field stitching. By organizing fields in a systematic pattern with controlled seams, the approach enables coverage of larger areas while maintaining the precision benefits of high-NA lithography in each individual field.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If the die is split into multiple lithographic fields to maintain large die size, then adaptability is improved, but design complexity increases due to seams between fields

Engineering Contradiction:

Improvedie size flexibilityVSAvoidseam management complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The seam regions between lithographic fields are given special local treatment with dedicated design rules and layout constraints. By applying specific quality requirements only to the seam areas (such as avoiding active device placements or using simplified patterns), the complexity is localized and managed efficiently without affecting the entire die design.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The seam locations and characteristics are predetermined and established during the early design stages. By pre-defining where seams will occur and what design constraints apply to those regions, the complexity of managing multiple fields is reduced, as designers can work with known, fixed seam parameters rather than dealing with variable seam conditions throughout the design process.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS12476205B2Rectilinear seams between adjacent fields of a die for improved layout efficiency

Publication Date: 2025.11.18 INTEL CORP

AI summary

Devices, systems, and methods are described related to providing nonlinear lithographic seams, such as rectilinear lithographic seams, between adjacent fields of an integrated circuit die. Such nonlinear lithographic seams include lithographic enabling structures formed in co-planar layers with respect to functional structures in functional units of the fields of the integrated circuit die. Providing nonlinear lithographic seams improves layout efficiency of the functional units of the integrated circuit die.