Recursive Liner System for Uniform Plasma Distribution
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Solution Overview
Problem
Conventional semiconductor process chambers experience non-uniform gas flow and RF ground paths, leading to process non-uniformities such as non-uniform etch rates and plasma non-uniformities due to asymmetric exhaust systems and non-uniform RF ground paths.
Innovation Solution
A recursive liner system is introduced, comprising an outer liner that lines the process chamber walls and an inner liner coupled to the substrate support, forming a recursive flow path that provides a uniform RF ground path and symmetric gas flow, mitigating non-uniformities by creating a self-compensating flow path and reducing asymmetric flow patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional exhaust system is used in semiconductor process chambers, then the chamber can be structurally simple, but the gas flow becomes non-uniform and plasma distribution becomes non-uniform
Solution Approach 1:
The patent implements a nested liner configuration where an inner liner is positioned within an outer liner, creating a recursive flow path between them. This nested structure modifies the gas flow pattern to achieve uniform plasma distribution while maintaining a relatively simple overall chamber structure.
Solution Approach 2:
The patent introduces a new spatial dimension by creating a recursive flow path between two liners, transforming the conventional single-channel exhaust approach into a multi-dimensional flow control system that achieves uniform gas distribution across the substrate surface.
2Manufacturing precision
If an asymmetric exhaust system is used, then the chamber design is simplified, but the RF ground path becomes non-uniform causing plasma non-uniformities
Solution Approach 1:
The nested liner configuration creates a symmetric recursive flow path that provides a uniform RF ground path throughout the chamber, eliminating plasma non-uniformities caused by asymmetric exhaust systems while maintaining manageable structural complexity.
3Manufacturing precision
If conventional single liner configuration is used, then the chamber structure is simple, but the gas flow resistance varies significantly across the substrate surface
Solution Approach 1:
The patent employs a nested liner system where the inner liner is positioned within the outer liner, creating a recursive flow path that equalizes gas flow resistance across the substrate surface. This configuration ensures uniform gas distribution while maintaining a relatively simple overall chamber structure.
Solution Approach 2:
By introducing a recursive flow path between two liners, the patent adds a new spatial dimension to flow control, transforming the conventional single-channel approach into a multi-dimensional system that achieves uniform flow resistance across the substrate surface.
Data Source
AI summary
Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.