Red Surface Emitting Laser Spacer Layer Leakage Current
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Solution Overview
Problem
Red surface emitting lasers experience significant degradation in performance characteristics at high temperatures due to increased leakage current, leading to a decrease in light output power, limiting their maximum light output power and operational efficiency.
Innovation Solution
A red surface emitting laser element is designed with a p-type semiconductor spacer layer of specific thickness (100 nm to 350 nm) between the active layer and the second reflector, optimizing the conduction band edge alignment to reduce leakage current and enhance high-temperature performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a red surface emitting laser element is operated at high temperature, then the operational efficiency decreases due to increased leakage current, but the light output power is limited
Solution Approach 1:
The patent applies parameter changes by optimizing the thickness of the p-type semiconductor spacer layer to a specific range (100 nm to 350 nm) and adjusting the conduction band edge alignment between the active layer and spacer layer. These parameter modifications reduce leakage current at high temperatures, enabling the laser to maintain performance characteristics and achieve full-power operation at elevated temperatures without the degradation typically observed in conventional designs
2Power
If the p-type semiconductor spacer layer thickness is increased to reduce leakage current, then the light output power is maintained, but the device structure becomes more complex
Solution Approach 1:
Rather than increasing spacer layer thickness, the patent achieves reduced leakage current through parameter changes in the conduction band edge alignment and optimal thickness selection (100 nm to 350 nm). This approach maintains light output power while avoiding excessive structural complexity, as the spacer layer remains a single functional layer rather than requiring multiple complex structures
Solution Approach 2:
The patent employs composite material design by carefully selecting the semiconductor material composition of the p-type spacer layer to achieve the desired conduction band edge alignment. This composite approach allows optimization of both electrical properties (leakage current reduction) and structural simplicity within a single integrated layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optimized spacer layer thickness reduces leakage current, maintaining high light output power and improving temperature characteristics, enabling full-power operation at elevated temperatures.
Implementation Method 1
Current injection allows carriers, such as electrons or holes, to be injected to the active layer, and the carriers are eventually converted to light as they undergo radiative recombination.
Implementation Method 2
A red surface emitting laser element is designed with a p-type semiconductor spacer layer of specific thickness (100 nm to 350 nm) between the active layer and the second reflector, optimizing the conduction band edge alignment to reduce leakage current and enhance high-temperature performance.
Data Source
AI summary
A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.