Package structure, semiconductor device and manufacturing method thereof

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Solution Overview

Problem

3D integrated circuits (3DICs) face challenges with high heat density and poor thermal dissipation, leading to hot spots that affect electrical performance and cause electromigration and reliability issues.

Innovation Solution

Incorporating heat-conductive dielectric materials like aluminum nitride and boron nitride in redistribution layers, along with thick electrically conductive layers, to create efficient heat dissipation paths in 3DICs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If chip density is increased in 3DICs, then productivity and integration are improved, but heat dissipation performance deteriorates and hot spots are generated

Engineering Contradiction:
Improvechip densityVSAvoidheat dissipation performance
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent applies local quality by implementing a multi-layer redistribution layer structure with varying thicknesses and thermal conductivities at different locations. Inner redistribution layers closer to heat-generating devices have different properties than outer layers, creating localized thermal management zones that address hot spots while maintaining overall high chip density

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses composite materials by combining multiple redistribution layer materials with different thermal conductivities (e.g., copper, aluminum, tungsten) and dielectric materials with varying thermal properties. This composite approach enables optimized heat dissipation paths through the package while maintaining electrical functionality and high integration density

Inventive Principle:
Principle #40Composite materials

2Device complexity

If heat is trapped in inner region of bottom stacked die, then device integration is achieved, but reliability deteriorates due to hot spots causing electromigration

Engineering Contradiction:
Improvedevice integrationVSAvoidelectromigration resistance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent transitions from planar heat dissipation to three-dimensional thermal management by implementing vertical redistribution layers that extend through multiple stacked dies. This multi-dimensional approach creates additional heat escape paths from inner die regions through outer dies to heat sinks, reducing hot spots while maintaining complex 3D integration

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The redistribution layers act as intermediary thermal conduits between heat-generating devices in inner dies and heat dissipation structures in outer dies. These intermediate layers transfer heat laterally and vertically, preventing direct heat trapping in inner regions while maintaining the integrated stacked die structure

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances thermal dissipation, maintaining chip operating temperatures within a desirable range, improving performance and preventing electromigration and reliability issues.

Implementation Method 1

one or more dielectric layers filled with a heat conductive dielectric material

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20260090478A1Package structure, semiconductor device and manufacturing method thereof
Publication Date: 2026.03.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20260090478A1 patent drawing
  • US20260090478A1 patent drawing
  • US20260090478A1 patent drawing

AI summary

A package structure includes a solder feature, a first redistribution layer structure on the solder feature, and a die mounted on and electrically coupled to the first redistribution layer structure. The first redistribution layer structure includes one or more dielectric layers filled with a heat conductive dielectric material.