Semiconductor Redistribution Layer Anti-Oxidation Design

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Solution Overview

Problem

Conventional semiconductor devices and manufacturing methods face issues of excess cost, decreased reliability, and large package sizes, particularly due to delamination problems on redistribution layers of semiconductor dies.

Innovation Solution

A semiconductor device and manufacturing method that includes a second redistribution layer made of materials like tin, silver, nickel, or titanium-tungsten alloy on a copper-based first redistribution layer, with an anti-oxidation layer formed on top to prevent oxidation and delamination, enhancing the reliability by forming an intermetallic compound and a thin, high-density oxide layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a copper-based first redistribution layer is used, then electrical conductivity is improved, but oxidation and delamination occur reducing reliability

Engineering Contradiction:
ImprovereliabilityVSAvoidoxidation and delamination
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A second redistribution layer made of tin, silver, nickel, or titanium-tungsten alloy is introduced as an intermediary between the copper-based first redistribution layer and the external environment. This intermediate layer prevents direct oxidation of the copper layer and eliminates delamination issues, while maintaining electrical conductivity functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs a composite structure consisting of multiple redistribution layers with different material properties. The first layer uses copper for high conductivity, while the second layer uses oxidation-resistant materials (tin, silver, nickel, or titanium-tungsten alloy) to provide protective functionality, creating a composite system that combines the benefits of both material types.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If conventional manufacturing methods are used, then production is simpler, but cost increases and reliability decreases

Engineering Contradiction:
Improveease of manufactureVSAvoidreliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The redistribution layer structure is segmented into multiple functional layers: a copper-based first redistribution layer for conductivity and a second redistribution layer with oxidation-resistant materials for protection. This segmentation allows each layer to perform its specific function optimally, improving reliability without significantly complicating the manufacturing process.

Inventive Principle:
Principle #1Segmentation

3Reliability

If protective layers are added to prevent oxidation, then reliability is improved, but device complexity increases

Engineering Contradiction:
ImprovereliabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The second redistribution layer serves multiple functions simultaneously: it acts as a protective barrier against oxidation, provides electrical conductivity, and prevents delamination. This multi-functionality reduces the need for additional separate protective layers, thereby limiting the increase in device complexity while still improving reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents delamination and oxidation of the first redistribution layer, improving the reliability and reducing costs by forming a stable interface and allowing for smaller, more compact semiconductor devices.

Implementation Method 1

an anti-oxidation layer formed on a top surface of the second redistribution layer

Methodology Applied
Scientific EffectOxidation prevention: Oxidation

Implementation Method 2

enhancing the reliability by forming an intermetallic compound and a thin, high-density oxide layer

Methodology Applied
Scientific EffectIntermetallic compound formation: Chemical Bonding

Implementation Method 3

enhancing the reliability by forming an intermetallic compound and a thin, high-density oxide layer

Methodology Applied
Scientific EffectOxide layer formation: Oxidation

Data Source

PatentUS10128176B2Semiconductor device and manufacturing method thereof
Publication Date: 2018.11.13 AMKOR TECH SINGAPORE HLDG PTE LTD
  • US10128176B2 patent drawing
  • US10128176B2 patent drawing
  • US10128176B2 patent drawing

AI summary

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises a signal redistribution structure that comprises an anti-oxidation layer.