Semiconductor Redistribution Layer Anti-Oxidation Design
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Solution Overview
Problem
Conventional semiconductor devices and manufacturing methods face issues of excess cost, decreased reliability, and large package sizes, particularly due to delamination problems on redistribution layers of semiconductor dies.
Innovation Solution
A semiconductor device and manufacturing method that includes a second redistribution layer made of materials like tin, silver, nickel, or titanium-tungsten alloy on a copper-based first redistribution layer, with an anti-oxidation layer formed on top to prevent oxidation and delamination, enhancing the reliability by forming an intermetallic compound and a thin, high-density oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a copper-based first redistribution layer is used, then electrical conductivity is improved, but oxidation and delamination occur reducing reliability
Solution Approach 1:
A second redistribution layer made of tin, silver, nickel, or titanium-tungsten alloy is introduced as an intermediary between the copper-based first redistribution layer and the external environment. This intermediate layer prevents direct oxidation of the copper layer and eliminates delamination issues, while maintaining electrical conductivity functionality.
Solution Approach 2:
The patent employs a composite structure consisting of multiple redistribution layers with different material properties. The first layer uses copper for high conductivity, while the second layer uses oxidation-resistant materials (tin, silver, nickel, or titanium-tungsten alloy) to provide protective functionality, creating a composite system that combines the benefits of both material types.
2Ease of manufacture
If conventional manufacturing methods are used, then production is simpler, but cost increases and reliability decreases
Solution Approach 1:
The redistribution layer structure is segmented into multiple functional layers: a copper-based first redistribution layer for conductivity and a second redistribution layer with oxidation-resistant materials for protection. This segmentation allows each layer to perform its specific function optimally, improving reliability without significantly complicating the manufacturing process.
3Reliability
If protective layers are added to prevent oxidation, then reliability is improved, but device complexity increases
Solution Approach 1:
The second redistribution layer serves multiple functions simultaneously: it acts as a protective barrier against oxidation, provides electrical conductivity, and prevents delamination. This multi-functionality reduces the need for additional separate protective layers, thereby limiting the increase in device complexity while still improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents delamination and oxidation of the first redistribution layer, improving the reliability and reducing costs by forming a stable interface and allowing for smaller, more compact semiconductor devices.
Implementation Method 1
an anti-oxidation layer formed on a top surface of the second redistribution layer
Implementation Method 2
enhancing the reliability by forming an intermetallic compound and a thin, high-density oxide layer
Implementation Method 3
enhancing the reliability by forming an intermetallic compound and a thin, high-density oxide layer
Data Source
AI summary
A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises a signal redistribution structure that comprises an anti-oxidation layer.


