Redistribution Layer Collar Structure for Bond Pad Reliability
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Solution Overview
Problem
Existing semiconductor device packaging configurations face challenges in accommodating sophisticated features and applications, leading to potential reliability issues, performance limitations, and increased costs.
Innovation Solution
A semiconductor device with a redistribution layer is developed, featuring a first non-conductive layer forming a collar structure around a bond pad opening, and a second non-conductive layer with different formulation, preventing direct contact with the bond pad. A conductive redistribution layer is formed over the second non-conductive layer, enabling direct connection to the bond pad through the opening.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If non-conductive layers are formed directly over bond pads to enable redistribution layer formation, then manufacturing is simplified, but electrochemical degradation and stress increase, reducing reliability
Solution Approach 1:
The collar structure acts as an intermediary barrier between the non-conductive layers and the bond pad. It prevents direct contact while still allowing the redistribution layer to be formed and connected to the bond pad through the opening, thus eliminating electrochemical degradation without complicating the manufacturing process
Solution Approach 2:
The non-conductive layer formation process is segmented into multiple steps: first forming a collar structure around the bond pad opening, then forming the main non-conductive layer. This segmentation allows the collar to protect the bond pad while the rest of the structure provides manufacturing simplicity
2Device complexity
If non-conductive layers directly contact bond pads to simplify structure, then device complexity is reduced, but electrochemical degradation occurs, harming performance
Solution Approach 1:
The collar structure serves as a mediator that blocks the harmful electrochemical interaction between non-conductive layers and bond pads, while maintaining structural simplicity and enabling straightforward redistribution layer formation
Solution Approach 2:
The collar structure provides localized protection only at the bond pad region where electrochemical degradation is most problematic, while the rest of the device maintains simple construction with direct non-conductive layer formation
3Productivity
If non-conductive layers are formed without collar structures to reduce manufacturing steps, then productivity increases, but stress and degradation increase, lowering reliability
Solution Approach 1:
The collar structure is formed in advance before the main non-conductive layer is deposited. This preliminary action prepares the structure to prevent electrochemical degradation from the outset, ensuring reliability without adding significant manufacturing complexity
Solution Approach 2:
The collar structure acts as a pre-positioned intermediary barrier that protects the bond pad during subsequent manufacturing steps, allowing efficient production while maintaining high reliability
Data Source
AI summary
A method of manufacturing a semiconductor device is provided. The method includes forming a first non-conductive layer over a top side a semiconductor die and patterning the first non-conductive layer to form a collar structure surrounding an opening exposing a top surface of a bond pad. A second non-conductive layer is formed over the first non-conductive layer and exposed portions of the top side of the semiconductor die. The second non-conductive layer is different from the first non-conductive layer. The second non-conductive layer is patterned to expose the top surface of the bond pad and inner sidewalls of the of the collar structure surrounding the opening such that the second non-conductive layer does not contact the bond pad. A metal redistribution layer is formed over the second non-conductive layer and exposed top surface of the bond pad.