Redistribution Layer Protection During Patterned Layer Removal
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Solution Overview
Problem
The performance of semiconductor structures formed by redistribution layer technology is compromised due to erosion of the redistribution layer during the removal of the patterned layer, leading to poor surface quality and potential gaps between the redistribution layer and the isolation layer, which affects the reliability and efficiency of the semiconductor device.
Innovation Solution
A protective layer is formed on the redistribution layer before removing the patterned layer, preventing air and reactants from eroding the redistribution layer and ensuring the integrity of the semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the patterned layer is removed to complete the fabrication process, then the fabrication process is completed and productivity is improved, but the redistribution layer is eroded by air and reactants causing surface quality degradation and potential gaps
Solution Approach 1:
A protective layer is introduced as an intermediary between the reactants and the redistribution layer during the patterned layer removal process. This protective layer prevents direct contact between the etchants and the redistribution layer, thereby preventing erosion and maintaining surface quality while allowing the fabrication process to complete successfully.
Solution Approach 2:
The protective layer is formed on the redistribution layer before the patterned layer removal process begins. This preliminary protective action ensures that the redistribution layer is already shielded from erosion before the harmful reactants are introduced, allowing the subsequent patterned layer removal to proceed without damaging the underlying redistribution layer.
2Ease of manufacture
If the patterned layer is removed using chemical reactants, then the patterned layer is successfully removed, but the redistribution layer is eroded leading to gaps and reduced reliability
Solution Approach 1:
The protective layer serves as a mediator that allows the chemical reactants to remove the patterned layer effectively while preventing those same reactants from eroding the redistribution layer. This intermediary protection maintains the integrity and reliability of the semiconductor structure throughout the removal process.
3Device complexity
If no protective layer is formed, then the fabrication process is simpler and faster, but the redistribution layer surface quality degrades due to erosion
Solution Approach 1:
The protective layer is formed as a preliminary step before the patterned layer removal. Although this adds a step to the process, it prevents the need for more complex repair or rework operations that would be required if erosion occurred, thereby maintaining overall process simplicity while ensuring high manufacturing precision.
Data Source
AI summary
A semiconductor structure and its fabrication method are provided. The fabrication method includes: providing a base substrate including a wiring region and an isolation region. A patterned layer is formed on the isolation region of the base substrate and the patterned layer exposes the wiring region of the base substrate. After forming the patterned layer, a redistribution layer is formed on the wiring region of the based substrate exposed by the patterned layer. A protective layer is formed on the redistribution layer, and after forming the protective layer, the patterned layer is removed.