Redistribution Layer Support Structure for Thin Conductive Elements
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing the size and defects of semiconductor devices due to limitations in the integration density and structural support of conductive elements, leading to concave surfaces and increased material costs.
Innovation Solution
A semiconductor device manufacturing method involving a first redistribution layer with a polymer protective layer and a support structure, where a conductive element is formed with a thickness less than 3 μm, and a seed layer is used to aid in the formation of a thicker layer, reducing defects and material usage by preventing concave surface formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the thickness of the conductive element is reduced to decrease device size, then the device size is reduced, but the structural support is insufficient leading to concave surface formation
Solution Approach 1:
A dielectric support structure is introduced as an intermediary element between the conductive element and the substrate. This support structure provides mechanical reinforcement to the thinned conductive element, preventing concave surface formation while allowing the conductive element to maintain its reduced thickness for smaller device size.
Solution Approach 2:
The invention creates a composite structure combining the conductive element with the dielectric support structure. This composite approach allows the conductive element to be thinner than before while the dielectric material provides the necessary structural support, resolving the contradiction between size reduction and strength maintenance.
2Strength
If a thicker conductive element is formed to improve structural support, then the structural support is improved, but the device size increases and material costs increase
Solution Approach 1:
The structural support function is segmented from the conductive element itself and assigned to a separate dielectric support structure. This allows the conductive element to be optimized for electrical function with minimal thickness, while the dielectric structure handles the mechanical support function, avoiding the need for a thicker conductive element.
Solution Approach 2:
The dielectric support structure acts as an intermediary that provides structural support without requiring the conductive element to be thicker. This mediator allows the conductive element to remain thin for small device size while still achieving the necessary structural support.
3Strength
If more material is deposited to prevent concave surface formation, then the structural support is improved, but the material costs increase and defects increase
Solution Approach 1:
Instead of depositing additional conductive material to prevent concave surfaces, a dielectric support structure is introduced as an intermediary. This support structure prevents concave surface formation without requiring extra conductive material, thereby reducing material costs and associated deposition defects.
Solution Approach 2:
The invention changes the material parameter from conductive material to dielectric material for the support structure. This parameter change allows structural support to be achieved with a material that does not require thick deposition, thus reducing material usage and costs while preventing concave surface formation.
Data Source
AI summary
A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.