Redistribution Layer Structure for High-Density I/O and Warpage Control
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Solution Overview
Problem
The miniaturization of electronic devices leads to reduced strength and stiffness of redistribution layers, increasing warpage and yield loss, which affects the supportability and input/output density.
Innovation Solution
A circuit structure with alternating layers of insulating materials of varying stiffness, where a less stiff first insulating layer is sandwiched between stiffer second insulating layers, enhancing supportability and allowing for smaller conductive elements, thereby increasing input/output density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a dielectric material with thinner thickness is selected to increase I/O density, then the input/output density is improved, but the strength and stiffness of the redistribution layer are reduced
Solution Approach 1:
The patent applies composite materials by combining multiple dielectric layers with different stiffness properties. Specifically, it uses a first dielectric layer with lower stiffness and a second dielectric layer with higher stiffness, creating a composite structure that balances flexibility and support. This composite approach allows the thinner overall structure needed for high I/O density while maintaining sufficient mechanical strength through the stiffer second layer.
Solution Approach 2:
The patent implements local quality by assigning different mechanical properties to different regions of the redistribution layer structure. The first dielectric layer closer to the circuit board uses lower stiffness material to accommodate deformation, while the second dielectric layer farther from the circuit board uses higher stiffness material to provide structural support. This spatial variation in material properties resolves the contradiction between thinness and strength.
2Quantity of substance
If the thickness of the dielectric layer is reduced to increase I/O density, then the input/output density is improved, but the probability of warpage increases
Solution Approach 1:
The composite dielectric structure with layers of different stiffness values provides differential mechanical support that counteracts warpage tendencies. The stiffer second dielectric layer acts as a reinforcing element that maintains planarity, while the overall reduced thickness enables high I/O density. This composite configuration stabilizes the redistribution layer against warpage.
Solution Approach 2:
By positioning the higher stiffness second dielectric layer at a specific location (farther from the circuit board), the patent locally enhances anti-warpage capability where it is most needed for structural stability, while allowing the first dielectric layer to remain thinner for high density. This localized reinforcement reduces warpage probability without sacrificing I/O density.
3Quantity of substance
If the thickness of the dielectric layer is reduced to increase I/O density, then the input/output density is improved, but the yield of the electronic device decreases
Solution Approach 1:
The composite dielectric structure improves manufacturing yield by providing enhanced mechanical strength and dimensional stability during the fabrication process. The stiffer second dielectric layer reduces defects such as cracking and misalignment that commonly occur with thinner single-layer structures, thereby improving overall device yield while maintaining high I/O density.
Solution Approach 2:
The patent improves yield by locally reinforcing the dielectric structure with a higher stiffness second layer positioned to provide maximum structural support during manufacturing and operation. This localized quality enhancement prevents process-induced defects and improves reliability without compromising the thin overall thickness needed for high density.
Data Source
AI summary
An electronic device includes a circuit structure, a first electronic unit and an encapsulation layer. The first electronic unit is disposed on the circuit structure. The encapsulation layer surrounds the first electronic unit. The circuit structure includes at least one first insulating layer and at least one second insulating layer. The at least one first insulating layer is disposed between the first electronic unit and the at least one second insulating layer. A stiffness of the at least one first insulating layer is less than a stiffness of the at least one second insulating layer.