Redistribution Semiconductor Package With IPDs for Dense Die Interconnects
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Solution Overview
Problem
The semiconductor industry faces challenges in increasing die-to-die interconnects for power delivery and signal transmission to accommodate higher integration densities, necessitating more efficient packaging techniques for semiconductor dies.
Innovation Solution
A semiconductor package design that connects two or more integrated circuit dies via a redistribution structure and external connections, incorporating integrated passive devices (IPDs) to reduce interconnection distance and enhance power and signal integrity, using a carrier substrate with a release layer and a redistribution structure to facilitate connections between SoCs and IPDs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If die-to-die interconnects are increased to accommodate higher integration density, then power delivery and signal transmission capability improve, but package complexity and manufacturing difficulty increase
Solution Approach 1:
The package is divided into multiple semiconductor dies (first die, second die, third die) with distinct functions. The redistribution structure is segmented into multiple layers (first redistribution layer, second redistribution layer) that can be independently designed and manufactured. This segmentation allows the complex interconnection function to be distributed across multiple simpler components, resolving the contradiction between high interconnect count and package complexity.
Solution Approach 2:
The patent transitions from planar interconnection to three-dimensional vertical stacking. Multiple redistribution layers are stacked vertically, with conductive vias connecting different layers. This dimensional change allows numerous interconnects to be packed in the vertical dimension rather than requiring extensive lateral routing, thereby increasing interconnect density without proportionally increasing package footprint and complexity.
2Quantity of substance
If minimum feature size is reduced to increase integration density, then more components can be integrated into given area, but manufacturing precision requirements increase
Solution Approach 1:
The high-density integration function is segmented across multiple separate semiconductor dies rather than attempting to integrate all components on a single die. Each die can be manufactured at existing process nodes with standard feature sizes, avoiding the need to shrink minimum feature sizes. The segmentation approach achieves high system-level integration density through multi-die packaging while maintaining manufacturability at each individual die.
3Reliability
If interconnection distance is reduced to enhance power and signal integrity, then power delivery efficiency improves, but device layout constraints increase
Solution Approach 1:
The patent utilizes vertical stacking to reduce interconnection distances. The redistribution structure employs multiple conductive layers stacked vertically with conductive vias providing direct vertical pathways between layers. This vertical arrangement significantly shortens the path length for power and signal interconnections compared to lateral routing, enhancing power and signal integrity. The layout constraints are managed by the regular, repeating pattern of vertical vias and redistribution traces that can be systematically designed.
Data Source
AI summary
In a semiconductor package having a redistribution structure, two or more semiconductor dies are connected to a first side of the redistribution structure and an encapsulant surrounds the two or more semiconductor dies. An integrated passive device (IPD) is connected on a second side of the redistribution structure. The second side is opposite to the first side and the IPD is electrically coupled to the redistribution structure. An interconnect device is connected on the second side of the redistribution structure and is electrically coupled to the redistribution structure. Two or more external connections are on the second side of the redistribution structure and are electrically coupled to the redistribution structure.