Redistribution Structure for Fine-Pitch PoP Warpage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in achieving smaller packaging techniques for semiconductor dies to enhance integration density and functionality while managing warpage and heat dissipation in Package-on-Package (PoP) technology.
Innovation Solution
The implementation of a redistribution structure with a flat upper surface and high modulus, high thermal conductivity warpage and bonding layers, along with a dual damascene process to form redistribution vias and pads, allowing for a smaller pitch and improved electrical and thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional packaging techniques are used, then manufacturing simplicity is maintained, but integration density and functionality are limited
Solution Approach 1:
The patent implements Package-on-Package (PoP) technology where a top semiconductor package is stacked on top of a bottom semiconductor package, creating a nested three-dimensional structure. This nesting approach enables high-level integration and component density while maintaining a small footprint on the PCB, directly resolving the contradiction between integration density and structural complexity.
Solution Approach 2:
The patent transitions from conventional two-dimensional packaging to three-dimensional stacked packaging by vertically stacking multiple semiconductor packages. This dimensional change allows more components to be integrated into a given area, achieving enhanced functionality and integration density without proportionally increasing the PCB footprint.
2Productivity
If feature size is reduced to increase integration density, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the semiconductor device into multiple separate packages (top package and bottom package) that are stacked vertically. This segmentation allows each package to be manufactured independently with standard feature sizes, avoiding the need to reduce minimum feature size across the entire device, thereby maintaining manufacturing precision while achieving high integration density through three-dimensional stacking.
3Productivity
If PoP technology is implemented to reduce footprint, then integration density improves, but warpage control becomes more difficult
Solution Approach 1:
The patent employs composite material structures within the semiconductor packages, including multiple dielectric layers (e.g., first dielectric layer, second dielectric layer, third dielectric layer) with different material properties. These composite structures are designed to balance thermal expansion coefficients and mechanical properties, thereby controlling warpage while enabling the PoP configuration for high integration density.
4Productivity
If PoP technology is implemented to reduce footprint, then integration density improves, but heat dissipation management becomes more challenging
Solution Approach 1:
The patent introduces intermediate thermal management structures between the stacked packages, including thermal interface materials and heat dissipation pathways through the dielectric layers. These intermediary structures facilitate heat transfer from the densely packed components to external heat sinks, managing thermal accumulation while maintaining the high integration density PoP configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables smaller pitch and reduced warpage, enhancing electrical and thermal conductivity, thus improving the integration density and performance of semiconductor devices.
Implementation Method 1
a dual damascene process to form redistribution vias and pads
Implementation Method 2
high modulus, high thermal conductivity warpage and bonding layers
Data Source
AI summary
An embodiment includes a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein. The method also includes forming a redistribution via and a redistribution pad over the first interconnect structure, the redistribution via and the redistribution pad being electrically coupled to at least one of the metallization patterns of the first interconnect structure, the redistribution via and the redistribution pad having a same material composition. The method also includes forming a warpage control dielectric layer over the redistribution pad. The method also includes forming a bond via and a bond pad over the redistribution pad, the bond pad being in the warpage control dielectric layer, the bond via being electrically coupled to the redistribution pad.